Inventor
TERASHIMA KAZUTAKA
JP26 patents
⚠️ This page may combine multiple inventors who share the name “TERASHIMA KAZUTAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
6 patentsUS5113469AMay 12, 1992
Optical wavelength-converting device for guided-wave second-harmonic generation in cerenkov radiation mode
TOSHIBA KK23 citations92
US5377291ADec 27, 1994
Wavelength converting optical device
TOSHIBA KK14 citations74
US5030315AJul 9, 1991
Methods of manufacturing compound semiconductor crystals and apparatus for the same
TOSHIBA KK12 citations73
US4960721AOct 2, 1990
Method for purifying group II-IV compound semiconductors
TOSHIBA KK19 citations73
US5162297ANov 10, 1992
Liquid phase epitaxial growth of high temperature superconducting oxide wafer
TOSHIBA KK8 citations72
US4816240AMar 28, 1989
Method of synthesizing Group III element-phosphorus compound
TOSHIBA KK3 citations62
JAPAN RES DEV CORP
5 patentsUS5450814ASep 19, 1995
Single crystal pulling apparatus having slidable shield plate to control area of opening around single crystal
JAPAN RES DEV CORP14 citations74
US5477805ADec 26, 1995
Preparation of silicon melt for use in pull method of manufacturing single crystal
JAPAN RES DEV CORP12 citations70
US5524574AJun 11, 1996
Control of oxygen concentration in single crystal pulled up from melt containing Group-V element
JAPAN RES DEV CORP14 citations69
US5476064ADec 19, 1995
Pull method for growth of single crystal using density detector and apparatus therefor
JAPAN RES DEV CORP4 citations61
US5410914AMay 2, 1995
Measuring device for density of liquid or high-temperature melt without influence of surface tension
JAPAN RES DEV CORP4 citations61
AGENCY IND SCIENCE TECHN
4 patentsUS4637854AJan 20, 1987
Method for producing GaAs single crystal
AGENCY IND SCIENCE TECHN12 citations74
US4606037AAug 12, 1986
Apparatus for manufacturing semiconductor single crystal
AGENCY IND SCIENCE TECHN14 citations74
US4496424AJan 29, 1985
Method for manufacture of III-V compound semiconducting single crystal
AGENCY IND SCIENCE TECHN11 citations74
US4586979AMay 6, 1986
Method for manufacture of III-V group compound semiconductor single crystal
AGENCY IND SCIENCE TECHN16 citations70
SHOWA DENKO KK
2 patentsUS6069021AMay 30, 2000
Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
SHOWA DENKO KK189 citations96
US6194744B1Feb 27, 2001
Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
SHOWA DENKO KK30 citations90
KOMATSU DENSHI KINZOKU KK
2 patentsUS6004393ADec 21, 1999
Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal
KOMATSU DENSHI KINZOKU KK20 citations92
US6019837AFeb 1, 2000
Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal
KOMATSU DENSHI KINZOKU KK11 citations73
TOSHIBA CERAMICS CO
2 patentsNITTO OPTICAL CO LTD
2 patentsUS9755111B2Sep 5, 2017
Active region containing nanodots (also referred to as “quantum dots”) in mother crystal formed of zinc blende-type (also referred to as “cubic crystal-type”) AlyInxGal-y-xN Crystal (y[[□]][≧] 0, x > 0) grown on Si substrate, and light emitting device using the same (LED and LD)
NITTO OPTICAL CO LTD0 citations39
US9595632B2Mar 14, 2017
Method for producing GaN-based crystal and semiconductor device
NITTO OPTICAL CO LTD0 citations39