Inventor

UEDA TETSUZO

US129 patents

⚠️ This page may combine multiple inventors who share the name “UEDA TETSUZO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UEDA TETSUZO

PANASONIC CORP

Nitride semiconductor device and method for manufacturing the same

Method for dividing substrate

Field effect transistor

Nitride semiconductor laser diode

Nitride semiconductor device and method for fabricating the same

Nitride semiconductor device and method for fabricating the same

Field effect transistor and method for fabricating the same

Field-effect transistor with nitride semiconductor and method for fabricating the same

Nitride semiconductor device and manufacturing method thereof

Semiconductor light emitting device

Nitride based semiconductor device with concave gate region

Nitride semiconductor device

Nitride semiconductor light emitting device

Nitride semiconductor device and method for fabricating the same

Semiconductor light emitting device, lighting module, lighting apparatus, and manufacturing method of semiconductor light emitting device

Surface emitting laser, photodetector and optical communication system using the same

Semiconductor device

Semiconductor laser device including transparent electrode

Nitride semiconductor device

Group III-nitride semiconductor device with a cap layer

Semiconductor light-emitting device comprising a plurality of semiconductor layers

Transistor for preventing current collapse and having improved leakage current characteristics and method for fabricating the same

Nitride semiconductor laser diode

Semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Layered substrates for epitaxial processing, and device

Production of low defect, crack-free epitaxial films on a thermally and/or lattice mismatched substrate

Phosphor, semiconductor light emitting device, and fabrication method thereof

Method for fabricating semiconductor devices

Semiconductor device

Semiconductor light emitting device and method for fabricating the same

Semiconductor laser device and method for fabricating the same

Semiconductor device and method for fabricating the same

Method for fabricating semiconductor device

Method for fabricating a semiconductor device that includes light beam irradiation to separate a semiconductor layer from a single crystal substrate

CBL TECHNOLOGIES INC

Epitaxial film produced by sequential hydride vapor phase epitaxy

Compound gas injection system and methods

Dual process semiconductor heterostructures and methods

Compound gas injection system

Organic acid scrubber and methods

Detached and inverted epitaxial regrowth &amp; methods

Particle trap apparatus and methods

MATSUSHITA ELECTRONICS CORP

Method of forming gallium nitride crystal

Method of forming gallium nitride crystal

Method of forming gallium nitride crystal

Growth of GaN on a substrate using a ZnO buffer layer

HIKITA MASAHIRO

Field effect transistor and method of manufacturing the same

Nitride semiconductor device

CBL TECHNOLOGY INC

Sequential hydride vapor phase epitaxy

UEDA DAISUKE

Transistor and method for operating the same

UEMOTO YASUHIRO

Nitride semiconductor device and method for fabricating the same

Detached and inverted epitaxial regrowth & methods