P

Inventor

MURAKAMI SEISHI

JP27 patents
⚠️ This page may combine multiple inventors who share the name “MURAKAMI SEISHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO ELECTRON LTD

23 patents
US5709757AJan 20, 1998

Film forming and dry cleaning apparatus and method

TOKYO ELECTRON LTD160 citations99
US5462603AOct 31, 1995

Semiconductor processing apparatus

TOKYO ELECTRON LTD183 citations99
US5595606AJan 21, 1997

Shower head and film forming apparatus using the same

TOKYO ELECTRON LTD1,174 citations98
US5690743ANov 25, 1997

Liquid material supply apparatus and method

TOKYO ELECTRON LTD79 citations96
US5963834AOct 5, 1999

Method for forming a CVD film

TOKYO ELECTRON LTD62 citations94
US6126994AOct 3, 2000

Liquid material supply apparatus and method

TOKYO ELECTRON LTD16 citations92
US5704214AJan 6, 1998

Apparatus for removing tramp materials and method therefor

TOKYO ELECTRON LTD28 citations92
US5522412AJun 4, 1996

Vacuum treatment apparatus and a cleaning method therefor

TOKYO ELECTRON LTD40 citations92
US7351291B2Apr 1, 2008

Semiconductor processing system

TOKYO ELECTRON LTD7 citations74
US6169032B1Jan 2, 2001

CVD film formation method

TOKYO ELECTRON LTD11 citations74
US6153515ANov 28, 2000

Method of forming multilayered film

TOKYO ELECTRON LTD14 citations74
USRE36925EOct 31, 2000

Vacuum treatment apparatus and a method for manufacturing semiconductor device therein

TOKYO ELECTRON LTD7 citations74
US5088697AFeb 18, 1992

Heat treating apparatus

TOKYO ELECTRON LTD7 citations71
US10950417B2Mar 16, 2021

Substrate processing apparatus and substrate loading mechanism

TOKYO ELECTRON LTD2 citations70
US5880526AMar 9, 1999

Barrier metal layer

TOKYO ELECTRON LTD6 citations63
US11965242B2Apr 23, 2024

Raw material supply apparatus and raw material supply method

TOKYO ELECTRON LTD0 citations62
US10221478B2Mar 5, 2019

Film formation device

TOKYO ELECTRON LTD1 citations61
US9984892B2May 29, 2018

Oxide film removing method, oxide film removing apparatus, contact forming method, and contact forming system

TOKYO ELECTRON LTD1 citations51
US9349642B2May 24, 2016

Method of forming contact layer

TOKYO ELECTRON LTD1 citations51
US11348794B2May 31, 2022

Semiconductor film forming method using hydrazine-based compound gas

TOKYO ELECTRON LTD0 citations46
US10546753B2Jan 28, 2020

Method of removing silicon oxide film

TOKYO ELECTRON LTD0 citations41
US9620370B2Apr 11, 2017

Method of forming Ti film

TOKYO ELECTRON LTD0 citations41
US8021717B2Sep 20, 2011

Film formation method, cleaning method and film formation apparatus

TOKYO ELECTRON LTD0 citations39

MITSUBISHI GAS CHEMICAL CO

2 patents

FUJITSU LTD

1 patent

MURAKAMI SEISHI

1 patent