Vacuum treatment apparatus and a method for manufacturing semiconductor device therein

Abstract

When an object of treatment is subjected to, for example, a gas treatment in an airtight chamber, reaction products adhere to the inner wall surface of the chamber, an object holder therein, and the corner portions of the chamber. When a cleaning medium is injected into the chamber, according to the present invention, the reaction products are dissolved in the cleaning medium by hydrolysis. Thereafter, the cleaning medium is discharged from the chamber. Then, the chamber is heated and evacuated, so that water vapor is discharged to provide a predetermined degree of vacuum, whereupon the treatment can be started anew. Therefore, a wiping operation can be omitted. Moreover, the reaction products remaining at the corner portions of the chamber can be removed without forming a source of polluted particles, so that the necessity of overhauling can be obviated. Thus, fully automatic cleaning, so to speak, can be effected, and the chamber need not be open to the atmosphere, so that the throughput can be improved.

What is claimed is: 
     
       1. A vacuum treatment apparatus for manufacturing a semiconductor device, wherein .[.a semiconductor wafer is.]. .Iadd.one or more objects of treatment are .Iaddend.subjected to various treatments for manufacturing the semiconductor device, using treatment gases in an airtight treatment chamber having a substantial vacuum, so that reaction products are produced in the treatment chamber, said vacuum treatment apparatus comprising: supply means for supplying a cleaning liquid into said treatment chamber after finishing one of the treatments, so that the interior of the chamber is cleaned by the liquid;   cleaning liquid discharge means for discharging the cleaning liquid from said treatment chamber; .[.and.].   heating means for heating and drying the interior of said chamber at least after discharging a predetermined quantity of the cleaning liquid;   .Iadd.a combination vapor discharge and ventilation means for discharging vapor of the cleaning liquid produced when the interior of said chamber is heated after the predetermined quantity of the cleaning liquid is discharged and for ventilating the chamber upon introduction of cleaning liquid by said supply means; and   exhaust means for evacuating said chamber after the vapor of the cleaning liquid is discharged by means of the vapor discharge means..Iaddend.   
     
     
       2. A vacuum treatment apparatus according to claim 1, .[.further comprising.]. .Iadd.wherein said combination vapor .Iaddend.discharge .Iadd.and ventilation .Iaddend.means .[.for discharging vapor of the cleaning liquid produced when the interior of said chamber is heated after the predetermined quantity of the cleaning liquid is discharged.]. .Iadd.includes a fluid conduit extending above and opening into said treatment chamber.Iaddend.. 
     
     
       3. A vacuum treatment apparatus according to claim .[.2.]. .Iadd.1.Iaddend., further comprising .[.exhaust means for evacuating said chamber after the vapor of the cleaning liquid is discharged by means of the vapor discharge means.]. .Iadd.a wetness detection means for monitoring the wetness level of the vapor being discharged.Iaddend.. 
     
     
       4. A vacuum treatment apparatus according to claim .[.1.]. .Iadd.3.Iaddend., further comprising .[.ventilating means for releasing a gas from said chamber into the atmosphere when the cleaning liquid is supplied into said chamber by means of the supply means.]. .Iadd.control means for opening a line in said exhaust means when the wetness level is determined by said wetness detection means to be below a threshold level.Iaddend.. 
     
     
       5. A vacuum treatment apparatus according to claim 1, wherein said heating means includes a heater arranged on the wall of said chamber. 
     
     
       6. A vacuum treatment apparatus according to claim 1, further comprising a level gage for measuring the liquid level of the cleaning liquid when the cleaning medium is supplied into said chamber. 
     
     
       7. A vacuum treatment apparatus according to claim 1, wherein said cleaning liquid discharge means discharges the cleaning liquid after the supply means fills said chamber with the cleaning liquid. 
     
     
       8. A vacuum treatment apparatus according to claim 1, wherein said supply means supplies the cleaning liquid into said chamber to keep the liquid level fixed as the cleaning medium discharge means discharges the cleaning liquid. 
     
     
       9. A vacuum treatment apparatus according to claim 1, further comprising measuring means for measuring the specific resistance of the cleaning liquid. 
     
     
       10. A vacuum treatment apparatus according to claim 1, wherein said supply means includes an injection bole in the form of a nozzle or a shower head for injecting the cleaning liquid into said chamber. 
     
     
       11. A vacuum treatment apparatus according to claim 1, further comprising stirring means for stirring the cleaning liquid in said chamber. 
     
     
       12. A vacuum treatment apparatus according to claim 1, further comprising vibrating means for vibrating the cleaning liquid in said chamber. 
     
     
       13. A vacuum treatment apparatus according to claim 1, further comprising .Iadd.second .Iaddend.heating means for heating .[.a gas exhaust system.]. .Iadd.said exhaust means.Iaddend.. 
     
     
       14. A vacuum treatment apparatus according to claim 1, further comprising an inlet gate formed in said treatment chamber for receipt of a wafer in said treatment chamber. 
     
     
       15. A vacuum treatment apparatus according to claim 1, further comprising a wafer mount positioned within said treatment chamber. 
     
     
       16. A vacuum treatment apparatus according to claim 1 wherein said supply means includes an injection pipe with a first valve, said cleaning liquid discharge means includes a discharge pipe with a second valve, and said vacuum treatment apparatus further comprising a controller for activating said first valve for initiating the supplying of a cleaning liquid into the treatment chamber after finishing one of the treatments, for activating said second valve for discharging said cleaning liquid after said treatment chamber is filled by said supply means, and for activating said heating means after said discharge means discharges the predetermined quantity of the cleaning liquid. 
     
     
       17. A vacuum treatment according to claim 1, further comprising, in addition to said supply means, a first and second reaction product gas introduction line opening into said treatment chamber. 
     
     
       18. A vacuum treatment apparatus for manufacturing a semiconductor device, wherein .[.a.]. .Iadd.at least one .Iaddend.semiconductor wafer is subjected to various treatments for manufacturing the semiconductor device, using treatment gases in an airtight treatment chamber having a substantial vacuum, so that reaction products resulting from reaction between components in the treatment gases or between the treatment gas components and the components of the wafer surface are produced in the treatment chamber, said vacuum treatment apparatus comprising: supply means for supplying a cleaning liquid into the treatment chamber after finishing one of the treatments, so that the interior of the chamber is cleaned by the liquid;   cleaning liquid discharge means for discharging the cleaning liquid from the treatment chamber;   heating means for heating and drying the interior of said chamber after discharging a predetermined quantity of the cleaning liquid, so that vapor of the cleaning liquid is produced;   vapor discharge means for discharging the vapor of the cleaning liquid when the interior of the chamber is heated; and   exhaust means for evacuating the chamber after the vapor of the cleaning liquid is discharged.Iadd.; and   treatment gas introduction means for directing treatment gas into said treatment chamber.Iaddend..   
     
     
       19. A vacuum treatment according to claim 18, further comprising an inlet gate formed in said treatment chamber for receipt of a wafer in said treatment chamber. 
     
     
       20. A vacuum treatment according to claim 18, further comprising a wafer mount positioned within said treatment chamber. 
     
     
       21. A vacuum treatment according to claim 18, .[.further comprising, in addition to said supply.]. .Iadd.wherein said treatment gas introduction .Iaddend.means.[.,.]. .Iadd.include .Iaddend.a first and .Iadd.a .Iaddend.second reaction product gas introduction line opening into said treatment chamber. .Iadd.22. A vacuum treatment apparatus as recited in claim 18, wherein said supply means includes a source of cleaning liquid which dissolves reaction products by hydrolysis upon the chamber being filled with cleaning liquid..Iaddend..Iadd.23. A vacuum treatment apparatus for manufacturing a semiconductor device, wherein at least one semiconductor wafer is subjected to various treatments, using treatment gases in an airtight treatment chamber having a substantial vacuum, so that reaction products are produced in the treatment chamber, said vacuum treatment apparatus comprising: supply means for supplying a cleaning liquid into said treatment chamber after finishing one of the treatments, so that the interior of the chamber is cleaned by the liquid;   cleaning liquid discharge means for discharging the cleaning liquid from said treatment chamber;   heating means for heating and drying the interior of said chamber at least after discharging a predetermined quantity of the cleaning liquid;   ventilating means for releasing a gas from said chamber into the atmosphere when the cleaning liquid is supplied into said chamber by means of the supply means;   exhaust means for evacuating the chamber after heating and drying the interior of said chamber; and   treatment gas introduction means for directing treatment gas into said   
     
     
        treatment chamber..Iaddend..Iadd.24.  A vacuum treatment apparatus as recited in claim 23, wherein said supply means includes a source of cleaning liquid which dissolves reaction, products by hydrolysis..Iaddend..Iadd.25. A vacuum treatment apparatus as recited in claim 23, wherein said ventilating means includes a ventilation pipe extending from and opening into an upper wall of said treatment chamber and a valve member for opening and closing said ventilation pipe, and said ventilation pipe including a seethrough section to provide for visual monitoring of the cleaning liquid introduced into said treatment 
     
     
        chamber..Iaddend..Iadd.26.  A vacuum treatment apparatus for manufacturing a semiconductor device, wherein at least one semiconductor wafer is subjected to various treatments for manufacturing the semiconductor device, using treatment gases in an airtight treatment chamber having a substantial vacuum, so that reaction products are produced in the treatment chamber, said vacuum treatment apparatus comprising: supply means for supplying a cleaning liquid into said treatment chamber after finishing one of the treatments, so that the interior of the chamber is cleaned by the liquid;   cleaning liquid discharge means for discharging the cleaning liquid from said treatment chamber; and   heating means for heating and drying the interior of said chamber at least after discharging a predetermined quantity of the cleaning liquid and control means for activating said cleaning liquid discharge means such that said cleaning liquid means discharges the cleaning liquid after the supply means fills said chamber with the cleaning liquid, and   wherein said supply means supplies the cleaning liquid into said chamber to keep the liquid level fixed as the cleaning liquid discharge means discharges the cleaning liquid..Iaddend..Iadd.27. A vacuum treatment apparatus for manufacturing a semiconductor device, wherein at least one semiconductor wafer is subjected to various treatments for manufacturing the semiconductor device, using treatment gases in an airtight treatment chamber having a substantial vacuum, so that reaction products are produced in the treatment chamber, said vacuum treatment apparatus comprising:   supply means for supplying a cleaning liquid into said treatment chamber after finishing one of the treatments, so that the interior of the chamber is cleaned by the liquid;   cleaning liquid discharge means for discharging the cleaning liquid from said treatment chamber;   heating means for heating and drying the interior of said chamber at least after discharging a predetermined quantity of the cleaning liquid;   measuring means for measuring the level of contaminants in the cleaning liquid; and   exhaust means for evacuating the chamber after heating and drying the   
     
     
        interior of said chamber..Iaddend..Iadd.28.  A vacuum treatment apparatus as recited in claim 27, wherein said measuring means measures the specific resistance of discharged cleaning liquid..Iaddend..Iadd.29. A vacuum treatment apparatus for manufacturing a semiconductor device, wherein at least one semiconductor wafer is subjected to various treatments for manufacturing the semiconductor device, using treatment gases in an airtight treatment chamber having a substantial vacuum, so that reaction products are produced in the treatment chamber, said vacuum treatment apparatus comprising: supply means for supplying a cleaning liquid into said treatment chamber after finishing one of the treatments, so that the interior of the chamber is cleaned by the liquid;   cleaning liquid discharge means for discharging the cleaning liquid from said treatment chamber;   heating means for heating and drying the interior of said chamber at least after discharging a predetermined quantity of the cleaning liquid; and   vibrating means for vibrating the cleaning liquid in said   
     
     
        chamber..Iaddend..Iadd.30.  A vacuum treatment apparatus for manufacturing a semiconductor device, wherein at least one semiconductor wafer is subjected to various treatments for manufacturing the semiconductor device, using treatment gases in an airtight treatment chamber having a substantial vacuum, so that reaction products are produced in the treatment chamber, said vacuum treatment apparatus comprising: supply means for supplying a cleaning liquid into said treatment chamber after finishing one of the treatments, so that the interior of the chamber is cleaned by the liquid;   cleaning liquid discharge means for discharging the cleaning liquid from said treatment chamber;   first heating means for heating and drying the interior of said chamber at least after discharging a predetermined quantity of the cleaning liquid; and   second heating means for heating said exhaust means to avoid the presence of vapor in an exhaust conduit of said exhaust means..Iaddend..Iadd.31. A vacuum treatment apparatus for manufacturing a semiconductor device comprising:   a treatment chamber;   a cleaning liquid supply conduit which has an inlet port opening into said treatment chamber;   a cleaning liquid discharge pipe having a discharge port below said inlet port which discharge port opens into said treatment chamber;   first and second treatment gas supply conduits which open into said treatment chamber;   a first heater positioned to heat and dry an interior of said treatment chamber;   a ventilation pipe which opens into said treatment chamber;   an evacuation pipe that opens into said treatment chamber; and   
     
     
       a vacuum pump in line with said evacuation pipe..Iaddend..Iadd.32.  A vacuum treatment apparatus as recited in claim 31 further comprising a second heater in line with said evacuation pipe..Iaddend..Iadd.33. A vacuum treatment apparatus as recited in claim 32 further comprising a trapping container positioned between said second heater and said vacuum pump..Iaddend.