Inventor
IM HEUNG-SOO
KR19 patents
Patents
19 patentsUS7042770B2May 9, 2006
Memory devices with page buffer having dual registers and method of using the same
SAMSUNG ELECTRONICS CO LTD66 citations98
US6671204B2Dec 30, 2003
Nonvolatile memory device with page buffer having dual registers and methods of using the same
SAMSUNG ELECTRONICS CO LTD195 citations98
US6996014B2Feb 7, 2006
Memory devices with page buffer having dual registers and method of using the same
SAMSUNG ELECTRONICS CO LTD58 citations96
US5856748AJan 5, 1999
Sensing amplifier with current mirror
SAMSUNG ELECTRONICS CO LTD63 citations96
US6724682B2Apr 20, 2004
Nonvolatile semiconductor memory device having selective multiple-speed operation mode
SAMSUNG ELECTRONICS CO LTD35 citations92
US6545910B2Apr 8, 2003
Non-volatile semiconductor memory device having word line defect check circuit
SAMSUNG ELECTRONICS CO LTD26 citations92
US6104668AAug 15, 2000
Programmable mode register for use in synchronized memory device
SAMSUNG ELECTRONICS CO LTD51 citations92
US6018487AJan 25, 2000
Read-only memory device having bit line discharge circuitry and method of reading data from the same
SAMSUNG ELECTRONICS CO LTD39 citations92
US5995422ANov 30, 1999
Redundancy circuit and method of a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD34 citations92
US6889268B2May 3, 2005
Multi-chip system having a continuous burst read mode of operation
SAMSUNG ELECTRONICS CO LTD17 citations84
US7227785B2Jun 5, 2007
Memory devices with page buffer having dual registers and method of using the same
SAMSUNG ELECTRONICS CO LTD8 citations74
US6381187B1Apr 30, 2002
Sense amplifier circuit for use in a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD11 citations74
US6087859AJul 11, 2000
Current mirror type sense amplifier circuit for semiconductor memory device
SAMSUNG ELECTRONICS CO LTD9 citations74
US5909405AJun 1, 1999
Nonvolatile semiconductor memory
SAMSUNG ELECTRONICS CO LTD13 citations73
US5774012AJun 30, 1998
Charge-pumping circuit for semiconductor memory device
SAMSUNG ELECTRONICS CO LTD15 citations73
US7602644B2Oct 13, 2009
Memory devices with page buffer having dual registers and method of using the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US6433590B1Aug 13, 2002
Current mirror type sense amplifier circuits for semiconductor memory devices and methods of operating same
SAMSUNG ELECTRONICS CO LTD4 citations63
US6603684B2Aug 5, 2003
Semiconductor memory device having noise tolerant input buffer
SAMSUNG ELECTRONICS CO LTD5 citations62
US7787300B2Aug 31, 2010
Memory devices with page buffer having dual registers and method of using the same
SAMSUNG ELECTRONICS CO LTD0 citations52