Memory devices with page buffer having dual registers and method of using the same

Abstract

A nonvolatile memory device and programming method and apparatus therefore are described that include operatively coupled first and second sense amplifiers having first and second data registers or latches, a storage circuit for storing a data of the second amplifier, a pass/fail check circuit for checking the content of the second data register whether a cell of the memory device has been sufficiently programmed and a restore circuit for resetting the second data register for reprogramming the device until sufficiently programmed.

1. A program method for a nonvolatile memory device comprising:
 storing data of a first cell in a memory cell array in a first register of a page buffer; 
 then storing the data in a second register of the page buffer temporarily during copy back operation. 
 
   
   
     2. The method of  claim 1 , further comprising:
 activating an isolation switch to connect the first register with the second register.