Inventor
KWON OH SUK
KR22 patents
⚠️ This page may combine multiple inventors who share the name “KWON OH SUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS7042770B2May 9, 2006
Memory devices with page buffer having dual registers and method of using the same
SAMSUNG ELECTRONICS CO LTD66 citations98
US6996014B2Feb 7, 2006
Memory devices with page buffer having dual registers and method of using the same
SAMSUNG ELECTRONICS CO LTD58 citations96
US7184308B2Feb 27, 2007
Flash memory devices and methods for programming the same
SAMSUNG ELECTRONICS CO LTD47 citations92
US6967868B2Nov 22, 2005
Semiconductor memory device having flexible column redundancy scheme
SAMSUNG ELECTRONICS CO LTD21 citations92
US7596026B2Sep 29, 2009
Program method of non-volatile memory device
SAMSUNG ELECTRONICS CO LTD12 citations84
US7227785B2Jun 5, 2007
Memory devices with page buffer having dual registers and method of using the same
SAMSUNG ELECTRONICS CO LTD8 citations74
US9524782B2Dec 20, 2016
Nonvolatile memory device and method of writing data in nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD4 citations73
US6958935B2Oct 25, 2005
Nonvolatile semiconductor memory with X8/X16 operation mode using address control
SAMSUNG ELECTRONICS CO LTD9 citations72
US7602644B2Oct 13, 2009
Memory devices with page buffer having dual registers and method of using the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7573774B2Aug 11, 2009
Multi-chip semiconductor memory device having internal power supply voltage generation circuit for decreasing current consumption
SAMSUNG ELECTRONICS CO LTD3 citations63
US7379351B2May 27, 2008
Non-volatile semiconductor memory and programming method
SAMSUNG ELECTRONICS CO LTD4 citations63
US7120056B2Oct 10, 2006
Semiconductor memory device capable of being mounted on a single package regardless of bit organization
SAMSUNG ELECTRONICS CO LTD4 citations62
US7733710B2Jun 8, 2010
Measuring high voltages in an integrated circuit using a common measurement pad
SAMSUNG ELECTRONICS CO LTD3 citations61
US7787300B2Aug 31, 2010
Memory devices with page buffer having dual registers and method of using the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7554386B2Jun 30, 2009
High voltage generation circuit and method for reducing peak current and power noise for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD1 citations52
US7738297B2Jun 15, 2010
Method and apparatus for controlling two or more non-volatile memory devices
SAMSUNG ELECTRONICS CO LTD0 citations48
LG ELECTRONICS INC
3 patentsUS7245896B2Jul 17, 2007
Apparatus for improving reception sensitivity of public wave receiver by reducing noise externally-emitted in the public wave receiver
LG ELECTRONICS INC18 citations80
US7717842B2May 18, 2010
Apparatus and method for generating pulsating noise in audio device
LG ELECTRONICS INC6 citations74
US7580532B2Aug 25, 2009
Multi-channel pulse width modulation apparatus
LG ELECTRONICS INC1 citations48