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Inventor

GRYNKEWICH GREGORY W

US30 patents
⚠️ This page may combine multiple inventors who share the name “GRYNKEWICH GREGORY W”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FREESCALE SEMICONDUCTOR INC

21 patents
US6784510B1Aug 31, 2004

Magnetoresistive random access memory device structures

FREESCALE SEMICONDUCTOR INC44 citations96
US6911156B2Jun 28, 2005

Methods for fabricating MRAM device structures

FREESCALE SEMICONDUCTOR INC28 citations92
US6885074B2Apr 26, 2005

Cladded conductor for use in a magnetoelectronics device and method for fabricating the same

FREESCALE SEMICONDUCTOR INC21 citations92
US6798004B1Sep 28, 2004

Magnetoresistive random access memory devices and methods for fabricating the same

FREESCALE SEMICONDUCTOR INC16 citations92
US6881351B2Apr 19, 2005

Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices

FREESCALE SEMICONDUCTOR INC27 citations91
US6812040B2Nov 2, 2004

Method of fabricating a self-aligned via contact for a magnetic memory element

FREESCALE SEMICONDUCTOR INC27 citations91
US7598596B2Oct 6, 2009

Methods and apparatus for a dual-metal magnetic shield structure

FREESCALE SEMICONDUCTOR INC11 citations84
US7239543B2Jul 3, 2007

Magnetic tunnel junction current sensors

FREESCALE SEMICONDUCTOR INC11 citations84
US6888743B2May 3, 2005

MRAM architecture

FREESCALE SEMICONDUCTOR INC15 citations84
US6943038B2Sep 13, 2005

Method for fabricating a flux concentrating system for use in a magnetoelectronics device

FREESCALE SEMICONDUCTOR INC13 citations82
US6927072B2Aug 9, 2005

Method of applying cladding material on conductive lines of MRAM devices

FREESCALE SEMICONDUCTOR INC13 citations82
US7264985B2Sep 4, 2007

Passive elements in MRAM embedded integrated circuits

FREESCALE SEMICONDUCTOR INC9 citations73
US7105363B2Sep 12, 2006

Cladded conductor for use in a magnetoelectronics device and method for fabricating the same

FREESCALE SEMICONDUCTOR INC6 citations73
US6890770B2May 10, 2005

Magnetoresistive random access memory device structures and methods for fabricating the same

FREESCALE SEMICONDUCTOR INC10 citations73
US6783994B2Aug 31, 2004

Method of fabricating a self-aligned magnetic tunneling junction and via contact

FREESCALE SEMICONDUCTOR INC9 citations73
US7105903B2Sep 12, 2006

Methods and structures for electrical communication with an overlying electrode for a semiconductor element

FREESCALE SEMICONDUCTOR INC8 citations72
US7169622B2Jan 30, 2007

Magnetoresistive random access memory devices and methods for fabricating the same

FREESCALE SEMICONDUCTOR INC4 citations63
US7324369B2Jan 29, 2008

MRAM embedded smart power integrated circuits

FREESCALE SEMICONDUCTOR INC4 citations62
US7087972B1Aug 8, 2006

Magnetoelectronic devices utilizing protective capping layers and methods of fabricating the same

FREESCALE SEMICONDUCTOR INC5 citations61
US7402529B2Jul 22, 2008

Method of applying cladding material on conductive lines of MRAM devices

FREESCALE SEMICONDUCTOR INC0 citations51
US7279341B2Oct 9, 2007

Method for fabricating a flux concentrating system for use in a magnetoelectronics device

FREESCALE SEMICONDUCTOR INC0 citations50

MOTOROLA INC

4 patents

EVERSPIN TECHNOLOGIES INC

3 patents

OLIN CORP

2 patents