Inventor
GRYNKEWICH GREGORY W
US30 patents
⚠️ This page may combine multiple inventors who share the name “GRYNKEWICH GREGORY W”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
21 patentsUS6784510B1Aug 31, 2004
Magnetoresistive random access memory device structures
FREESCALE SEMICONDUCTOR INC44 citations96
US6911156B2Jun 28, 2005
Methods for fabricating MRAM device structures
FREESCALE SEMICONDUCTOR INC28 citations92
US6885074B2Apr 26, 2005
Cladded conductor for use in a magnetoelectronics device and method for fabricating the same
FREESCALE SEMICONDUCTOR INC21 citations92
US6798004B1Sep 28, 2004
Magnetoresistive random access memory devices and methods for fabricating the same
FREESCALE SEMICONDUCTOR INC16 citations92
US6881351B2Apr 19, 2005
Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices
FREESCALE SEMICONDUCTOR INC27 citations91
US6812040B2Nov 2, 2004
Method of fabricating a self-aligned via contact for a magnetic memory element
FREESCALE SEMICONDUCTOR INC27 citations91
US7598596B2Oct 6, 2009
Methods and apparatus for a dual-metal magnetic shield structure
FREESCALE SEMICONDUCTOR INC11 citations84
US7239543B2Jul 3, 2007
Magnetic tunnel junction current sensors
FREESCALE SEMICONDUCTOR INC11 citations84
US6888743B2May 3, 2005
MRAM architecture
FREESCALE SEMICONDUCTOR INC15 citations84
US6943038B2Sep 13, 2005
Method for fabricating a flux concentrating system for use in a magnetoelectronics device
FREESCALE SEMICONDUCTOR INC13 citations82
US6927072B2Aug 9, 2005
Method of applying cladding material on conductive lines of MRAM devices
FREESCALE SEMICONDUCTOR INC13 citations82
US7264985B2Sep 4, 2007
Passive elements in MRAM embedded integrated circuits
FREESCALE SEMICONDUCTOR INC9 citations73
US7105363B2Sep 12, 2006
Cladded conductor for use in a magnetoelectronics device and method for fabricating the same
FREESCALE SEMICONDUCTOR INC6 citations73
US6890770B2May 10, 2005
Magnetoresistive random access memory device structures and methods for fabricating the same
FREESCALE SEMICONDUCTOR INC10 citations73
US6783994B2Aug 31, 2004
Method of fabricating a self-aligned magnetic tunneling junction and via contact
FREESCALE SEMICONDUCTOR INC9 citations73
US7105903B2Sep 12, 2006
Methods and structures for electrical communication with an overlying electrode for a semiconductor element
FREESCALE SEMICONDUCTOR INC8 citations72
US7169622B2Jan 30, 2007
Magnetoresistive random access memory devices and methods for fabricating the same
FREESCALE SEMICONDUCTOR INC4 citations63
US7324369B2Jan 29, 2008
MRAM embedded smart power integrated circuits
FREESCALE SEMICONDUCTOR INC4 citations62
US7087972B1Aug 8, 2006
Magnetoelectronic devices utilizing protective capping layers and methods of fabricating the same
FREESCALE SEMICONDUCTOR INC5 citations61
US7402529B2Jul 22, 2008
Method of applying cladding material on conductive lines of MRAM devices
FREESCALE SEMICONDUCTOR INC0 citations51
US7279341B2Oct 9, 2007
Method for fabricating a flux concentrating system for use in a magnetoelectronics device
FREESCALE SEMICONDUCTOR INC0 citations50
MOTOROLA INC
4 patentsUS6518071B1Feb 11, 2003
Magnetoresistive random access memory device and method of fabrication thereof
MOTOROLA INC49 citations92
US5453401ASep 26, 1995
Method for reducing corrosion of a metal surface containing at least aluminum and copper
MOTOROLA INC32 citations92
US5814545ASep 29, 1998
Semiconductor device having a phosphorus doped PECVD film and a method of manufacture
MOTOROLA INC44 citations90
US5650356AJul 22, 1997
Method for reducing corrosion in openings on a semiconductor wafer
MOTOROLA INC7 citations73
EVERSPIN TECHNOLOGIES INC
3 patentsUS7444738B2Nov 4, 2008
Method for tunnel junction sensor with magnetic cladding
EVERSPIN TECHNOLOGIES INC6 citations63
US7445943B2Nov 4, 2008
Magnetic tunnel junction memory and method with etch-stop layer
EVERSPIN TECHNOLOGIES INC4 citations63
US7476329B2Jan 13, 2009
Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices
EVERSPIN TECHNOLOGIES INC0 citations51
OLIN CORP
2 patentsUS4438013AMar 20, 1984
Phosphorylated and thiophosphorylated poly(oxyalkylated) hydrazines and selected adducts and their use as corrosion inhibitors
OLIN CORP0 citations52
US4428915AJan 31, 1984
Process for recovering phosphate values from precipitates formed during the neutralization of impure wet process phosphoric acid
OLIN CORP0 citations42