Inventor
BUTCHER BRIAN R
US24 patents
⚠️ This page may combine multiple inventors who share the name “BUTCHER BRIAN R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
14 patentsUS6911156B2Jun 28, 2005
Methods for fabricating MRAM device structures
FREESCALE SEMICONDUCTOR INC28 citations92
US6885074B2Apr 26, 2005
Cladded conductor for use in a magnetoelectronics device and method for fabricating the same
FREESCALE SEMICONDUCTOR INC21 citations92
US6798004B1Sep 28, 2004
Magnetoresistive random access memory devices and methods for fabricating the same
FREESCALE SEMICONDUCTOR INC16 citations92
US6881351B2Apr 19, 2005
Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices
FREESCALE SEMICONDUCTOR INC27 citations91
US6888743B2May 3, 2005
MRAM architecture
FREESCALE SEMICONDUCTOR INC15 citations84
US6943038B2Sep 13, 2005
Method for fabricating a flux concentrating system for use in a magnetoelectronics device
FREESCALE SEMICONDUCTOR INC13 citations82
US7105363B2Sep 12, 2006
Cladded conductor for use in a magnetoelectronics device and method for fabricating the same
FREESCALE SEMICONDUCTOR INC6 citations73
US6806127B2Oct 19, 2004
Method and structure for contacting an overlying electrode for a magnetoelectronics element
FREESCALE SEMICONDUCTOR INC9 citations73
US7105903B2Sep 12, 2006
Methods and structures for electrical communication with an overlying electrode for a semiconductor element
FREESCALE SEMICONDUCTOR INC8 citations72
US7169622B2Jan 30, 2007
Magnetoresistive random access memory devices and methods for fabricating the same
FREESCALE SEMICONDUCTOR INC4 citations63
US7087972B1Aug 8, 2006
Magnetoelectronic devices utilizing protective capping layers and methods of fabricating the same
FREESCALE SEMICONDUCTOR INC5 citations61
US7494825B2Feb 24, 2009
Top contact alignment in semiconductor devices
FREESCALE SEMICONDUCTOR INC3 citations56
US7042025B2May 9, 2006
Method and structure for contacting an overlying electrode for a magnetoelectronics element
FREESCALE SEMICONDUCTOR INC1 citations52
US7279341B2Oct 9, 2007
Method for fabricating a flux concentrating system for use in a magnetoelectronics device
FREESCALE SEMICONDUCTOR INC0 citations50
EVERSPIN TECHNOLOGIES INC
4 patentsUS7833806B2Nov 16, 2010
Structure and method for fabricating cladded conductive lines in magnetic memories
EVERSPIN TECHNOLOGIES INC15 citations83
US7602177B2Oct 13, 2009
Sensor having moveable cladding suspended near a magnetic field source
EVERSPIN TECHNOLOGIES INC5 citations73
US7445943B2Nov 4, 2008
Magnetic tunnel junction memory and method with etch-stop layer
EVERSPIN TECHNOLOGIES INC4 citations63
US7476329B2Jan 13, 2009
Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices
EVERSPIN TECHNOLOGIES INC0 citations51
MATHER PHILLIP G
2 patentsUS8119424B2Feb 21, 2012
Electronic device including a magneto-resistive memory device and a process for forming the electronic device
MATHER PHILLIP G72 citations96
US8236578B2Aug 7, 2012
Electronic device including a magneto-resistive memory device and a process for forming the electronic device
MATHER PHILLIP G14 citations83