Inventor
DURLAM MARK A
US32 patents
⚠️ This page may combine multiple inventors who share the name “DURLAM MARK A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
25 patentsUS6784510B1Aug 31, 2004
Magnetoresistive random access memory device structures
FREESCALE SEMICONDUCTOR INC44 citations96
US7262069B2Aug 28, 2007
3-D inductor and transformer devices in MRAM embedded integrated circuits
FREESCALE SEMICONDUCTOR INC38 citations92
US6936763B2Aug 30, 2005
Magnetic shielding for electronic circuits which include magnetic materials
FREESCALE SEMICONDUCTOR INC26 citations92
US6911156B2Jun 28, 2005
Methods for fabricating MRAM device structures
FREESCALE SEMICONDUCTOR INC28 citations92
US6909631B2Jun 21, 2005
MRAM and methods for reading the MRAM
FREESCALE SEMICONDUCTOR INC47 citations92
US6903964B2Jun 7, 2005
MRAM architecture with electrically isolated read and write circuitry
FREESCALE SEMICONDUCTOR INC27 citations92
US6885074B2Apr 26, 2005
Cladded conductor for use in a magnetoelectronics device and method for fabricating the same
FREESCALE SEMICONDUCTOR INC21 citations92
US6798004B1Sep 28, 2004
Magnetoresistive random access memory devices and methods for fabricating the same
FREESCALE SEMICONDUCTOR INC16 citations92
US6760266B2Jul 6, 2004
Sense amplifier and method for performing a read operation in a MRAM
FREESCALE SEMICONDUCTOR INC28 citations92
US6881351B2Apr 19, 2005
Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices
FREESCALE SEMICONDUCTOR INC27 citations91
US6812040B2Nov 2, 2004
Method of fabricating a self-aligned via contact for a magnetic memory element
FREESCALE SEMICONDUCTOR INC27 citations91
US7239543B2Jul 3, 2007
Magnetic tunnel junction current sensors
FREESCALE SEMICONDUCTOR INC11 citations84
US6888743B2May 3, 2005
MRAM architecture
FREESCALE SEMICONDUCTOR INC15 citations84
US6943038B2Sep 13, 2005
Method for fabricating a flux concentrating system for use in a magnetoelectronics device
FREESCALE SEMICONDUCTOR INC13 citations82
US7144744B2Dec 5, 2006
Magnetoresistive random access memory device structures and methods for fabricating the same
FREESCALE SEMICONDUCTOR INC17 citations80
US7031183B2Apr 18, 2006
MRAM device integrated with other types of circuitry
FREESCALE SEMICONDUCTOR INC14 citations79
US7264985B2Sep 4, 2007
Passive elements in MRAM embedded integrated circuits
FREESCALE SEMICONDUCTOR INC9 citations73
US7105363B2Sep 12, 2006
Cladded conductor for use in a magnetoelectronics device and method for fabricating the same
FREESCALE SEMICONDUCTOR INC6 citations73
US6890770B2May 10, 2005
Magnetoresistive random access memory device structures and methods for fabricating the same
FREESCALE SEMICONDUCTOR INC10 citations73
US7271011B2Sep 18, 2007
Methods of implementing magnetic tunnel junction current sensors
FREESCALE SEMICONDUCTOR INC2 citations63
US7169622B2Jan 30, 2007
Magnetoresistive random access memory devices and methods for fabricating the same
FREESCALE SEMICONDUCTOR INC4 citations63
US7324369B2Jan 29, 2008
MRAM embedded smart power integrated circuits
FREESCALE SEMICONDUCTOR INC4 citations62
US7087972B1Aug 8, 2006
Magnetoelectronic devices utilizing protective capping layers and methods of fabricating the same
FREESCALE SEMICONDUCTOR INC5 citations61
US7154772B2Dec 26, 2006
MRAM architecture with electrically isolated read and write circuitry
FREESCALE SEMICONDUCTOR INC1 citations52
US7279341B2Oct 9, 2007
Method for fabricating a flux concentrating system for use in a magnetoelectronics device
FREESCALE SEMICONDUCTOR INC0 citations50
EVERSPIN TECHNOLOGIES INC
5 patentsUS7510883B2Mar 31, 2009
Magnetic tunnel junction temperature sensors and methods
EVERSPIN TECHNOLOGIES INC12 citations84
US7511990B2Mar 31, 2009
Magnetic tunnel junction temperature sensors
EVERSPIN TECHNOLOGIES INC8 citations84
US7747926B2Jun 29, 2010
Methods and apparatus for a memory device with self-healing reference bits
EVERSPIN TECHNOLOGIES INC16 citations83
US7432150B2Oct 7, 2008
Method of manufacturing a magnetoelectronic device
EVERSPIN TECHNOLOGIES INC2 citations60
US7476329B2Jan 13, 2009
Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices
EVERSPIN TECHNOLOGIES INC0 citations51