P

Inventor

DURLAM MARK A

US32 patents
⚠️ This page may combine multiple inventors who share the name “DURLAM MARK A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FREESCALE SEMICONDUCTOR INC

25 patents
US6784510B1Aug 31, 2004

Magnetoresistive random access memory device structures

FREESCALE SEMICONDUCTOR INC44 citations96
US7262069B2Aug 28, 2007

3-D inductor and transformer devices in MRAM embedded integrated circuits

FREESCALE SEMICONDUCTOR INC38 citations92
US6936763B2Aug 30, 2005

Magnetic shielding for electronic circuits which include magnetic materials

FREESCALE SEMICONDUCTOR INC26 citations92
US6911156B2Jun 28, 2005

Methods for fabricating MRAM device structures

FREESCALE SEMICONDUCTOR INC28 citations92
US6909631B2Jun 21, 2005

MRAM and methods for reading the MRAM

FREESCALE SEMICONDUCTOR INC47 citations92
US6903964B2Jun 7, 2005

MRAM architecture with electrically isolated read and write circuitry

FREESCALE SEMICONDUCTOR INC27 citations92
US6885074B2Apr 26, 2005

Cladded conductor for use in a magnetoelectronics device and method for fabricating the same

FREESCALE SEMICONDUCTOR INC21 citations92
US6798004B1Sep 28, 2004

Magnetoresistive random access memory devices and methods for fabricating the same

FREESCALE SEMICONDUCTOR INC16 citations92
US6760266B2Jul 6, 2004

Sense amplifier and method for performing a read operation in a MRAM

FREESCALE SEMICONDUCTOR INC28 citations92
US6881351B2Apr 19, 2005

Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices

FREESCALE SEMICONDUCTOR INC27 citations91
US6812040B2Nov 2, 2004

Method of fabricating a self-aligned via contact for a magnetic memory element

FREESCALE SEMICONDUCTOR INC27 citations91
US7239543B2Jul 3, 2007

Magnetic tunnel junction current sensors

FREESCALE SEMICONDUCTOR INC11 citations84
US6888743B2May 3, 2005

MRAM architecture

FREESCALE SEMICONDUCTOR INC15 citations84
US6943038B2Sep 13, 2005

Method for fabricating a flux concentrating system for use in a magnetoelectronics device

FREESCALE SEMICONDUCTOR INC13 citations82
US7144744B2Dec 5, 2006

Magnetoresistive random access memory device structures and methods for fabricating the same

FREESCALE SEMICONDUCTOR INC17 citations80
US7031183B2Apr 18, 2006

MRAM device integrated with other types of circuitry

FREESCALE SEMICONDUCTOR INC14 citations79
US7264985B2Sep 4, 2007

Passive elements in MRAM embedded integrated circuits

FREESCALE SEMICONDUCTOR INC9 citations73
US7105363B2Sep 12, 2006

Cladded conductor for use in a magnetoelectronics device and method for fabricating the same

FREESCALE SEMICONDUCTOR INC6 citations73
US6890770B2May 10, 2005

Magnetoresistive random access memory device structures and methods for fabricating the same

FREESCALE SEMICONDUCTOR INC10 citations73
US7271011B2Sep 18, 2007

Methods of implementing magnetic tunnel junction current sensors

FREESCALE SEMICONDUCTOR INC2 citations63
US7169622B2Jan 30, 2007

Magnetoresistive random access memory devices and methods for fabricating the same

FREESCALE SEMICONDUCTOR INC4 citations63
US7324369B2Jan 29, 2008

MRAM embedded smart power integrated circuits

FREESCALE SEMICONDUCTOR INC4 citations62
US7087972B1Aug 8, 2006

Magnetoelectronic devices utilizing protective capping layers and methods of fabricating the same

FREESCALE SEMICONDUCTOR INC5 citations61
US7154772B2Dec 26, 2006

MRAM architecture with electrically isolated read and write circuitry

FREESCALE SEMICONDUCTOR INC1 citations52
US7279341B2Oct 9, 2007

Method for fabricating a flux concentrating system for use in a magnetoelectronics device

FREESCALE SEMICONDUCTOR INC0 citations50

EVERSPIN TECHNOLOGIES INC

5 patents

MOTOROLA INC

2 patents