Inventor

SONG DU-HEON

KR27 patents

⚠️ This page may combine multiple inventors who share the name “SONG DU-HEON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SONG DU-HEON

SAMSUNG ELECTRONICS CO LTD

Bulk substrates in FinFETs with trench insulation surrounding FIN pairs having FINs separated by recess hole shallower than trench

Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same

Semiconductor device having resistor and method of fabricating the same

Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating same

Method of fabricating fin field effect transistor using isotropic etching technique

Semiconductor memory device and fabrication method thereof using damascene bitline process

Method of forming asymmetric MOS transistor with a channel stopping region and a trench-type gate

Recess gate-type semiconductor device and method of manufacturing the same

Semiconductor device

Transistors of semiconductor device having channel region in a channel-portion hole and methods of forming the same

Method of manufacturing a semiconductor device

Method of fabricating fin field effect transistor using isotropic etching technique

Transistor of a semiconductor device having a punchthrough protection layer and methods of forming the same

Transistor having asymmetric channel region, semiconductor device including the same, and method of fabricating semiconductor device including the same

Semiconductor device

Recessed-type field effect transistor with reduced body effect

Method of manufacturing recess type MOS transistor having a dual diode impurity layer structure

Transistors of semiconductor device having channel region in a channel-portion hole and methods of forming the same

Semiconductor memory device and fabrication method thereof using damascene gate and epitaxial growth

Semiconductor memory device and fabrication method thereof using damascene gate and epitaxial growth

LG SEMICON CO LTD

Fabrication method for semiconductor device

Fabrication method for semiconductor memory device

Method of fabricating semiconductor device

Method for forming isolation region of semiconductor device

Semiconductor device fabrication method

HYUNDAI ELECTRONICS IND

Method for forming oxide film in semiconductor device

CHOI YONG-LACK

Method of fabricating semiconductor device