Inventor

DASGUPTA SANSAPTAK

US215 patents

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DASGUPTA SANSAPTAK

INTEL CORP

Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication

Light-emitting diode (LED) and micro LED substrates and methods for making the same

Ferroelectric-based field-effect transistor with threshold voltage switching for enhanced on-state and off-state performance

Transition metal dichalcogenides (TMDCS) over III-nitride heteroepitaxial layers

Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices

III-N epitaxial device structures on free standing silicon mesas

Group III-N transistor on nanoscale template structures

N-channel gallium nitride transistors

Forming LED structures on silicon fins

Nonplanar III-N transistors with compositionally graded semiconductor channels

Group III-N transistors on nanoscale template structures

Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stack

Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation

Lattice mismatched hetero-epitaxial film

Nonplanar III-N transistors with compositionally graded semiconductor channels

Group III-N transistors on nanoscale template structures

Defect transferred and lattice mismatched epitaxial film

Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation

Epitaxial film on nanoscale structure

III-N tunnel device architectures and high frequency mixers employing a III-N tunnel device

Planar transistors with wrap-around gates and wrap-around source and drain contacts

Group III-nitride devices with improved RF performance and their methods of fabrication

Stacked integration of III-N transistors and thin-film transistors

High breakdown voltage structure for high performance GaN-based HEMT and MOS devices to enable GaN C-MOS

Filter-centric III-N films enabling RF filter integration with III-N transistors

Complementary group III-nitride transistors with complementary polarization junctions

Self aligned gate connected plates for group III-Nitride devices and methods of fabrication

Tri-gate architecture multi-nanowire confined transistor

Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers

Group III-nitride antenna diode

High aspect ratio non-planar capacitors formed via cavity fill

Integrated circuit components with substrate cavities

Tunnel polarization junction III-N transistors

Group III-nitride light emitting devices including a polarization junction

Techniques for monolithic co-integration of polycrystalline thin-film bulk acoustic resonator devices and monocrystalline III-N semiconductor transistor devices

Techniques for monolithic co-integration of thin-film bulk acoustic resonator devices and III-N semiconductor transistor devices

Single-flipped resonator devices with 2DEG bottom electrode

Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices

Stacked group III-nitride transistors for an RF switch and methods of fabrication

Group III-N material conductive shield for high frequency metal interconnects

P-I-N diode and connected group III-N device and their methods of fabrication

Transistor connected diodes and connected III-N devices and their methods of fabrication

Film bulk acoustic resonator (FBAR) devices for high frequency RF filters

THEN HAN WUI

Nonplanar III-N transistors with compositionally graded semiconductor channels

Group III-N transistors on nanoscale template structures

Group III-N transistors on nanoscale template structures

PILLARISETTY RAVI

Trench confined epitaxially grown device layer(s)

Trench confined epitaxially grown device layer(s)

DASGUPTA SANSAPTAK

Epitaxial buffer layers for group III-N transistors on silicon substrates

GOEL NITI

Epitaxial film growth on patterned substrate