Inventor

SHIMOYAMA KENJI

JP32 patents

⚠️ This page may combine multiple inventors who share the name “SHIMOYAMA KENJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHIMOYAMA KENJI

MITSUBISHI CHEM CORP

Semiconductor device having contact resistance reducing layer

Semiconductor device and method for manufacturing the same

Semiconductor light-emitting device and manufacturing method for the same

Semiconductor light-emitting devices

Semiconductor light-emitting devices

Semiconductor laser diode

Semiconductor optical device apparatus

Semiconductor light-emitting device

Method of preparing compound semiconductor

Method of preparing compound semiconductor

Semiconductor light-emitting device

Semiconductor light-emitting device

III-V compound semiconductor with high crystal quality and luminous efficiency

Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing the same

Laser diode and process for producing the same

GaN substrate wafer and method for manufacturing same

Nitride light-emitting diode element and method of manufacturing same

MITSUBISHI CHEM IND

Method of manufacturing a group II-VI compound semiconductor

Semiconductor laser element

Fabrication of semiconductor laser elements

Compound semiconductor and its fabrication

Method of making semiconductor laser devices

Semiconductor laser devices

BANDO CHEMICAL IND

Conductive paste

Grinding material and production method of grinding material

Bonding composition

SEOUL VIOSYS CO LTD

High efficiency light emitting diode and method of fabricating the same

Gallium nitride-based light emitting diode

MITSUBISHI MONSANTO CHEM

Epitaxial substrate for high-intensity led, and method of manufacturing same

UNIV TOHOKU

Gallium nitride-based material and method of manufacturing the same

AGENCY IND SCIENCE TECHN

Divided electrode type semiconductor laser device