Inventor
RANA PARVINDER KUMAR
IN24 patents
⚠️ This page may combine multiple inventors who share the name “RANA PARVINDER KUMAR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
19 patentsUS10103172B2Oct 16, 2018
Method for high performance standard cell design techniques in finFET based library using local layout effects (LLE)
SAMSUNG ELECTRONICS CO LTD7 citations82
US10672443B2Jun 2, 2020
Methods and systems for performing decoding in finFET based memories
SAMSUNG ELECTRONICS CO LTD10 citations81
US10748932B2Aug 18, 2020
Method for high performance standard cell design techniques in FinFET based library using local layout effects (LLE)
SAMSUNG ELECTRONICS CO LTD2 citations71
US10566959B1Feb 18, 2020
Sense amplifier flip-flop and method for fixing setup time violations in an integrated circuit
SAMSUNG ELECTRONICS CO LTD3 citations69
US10998018B1May 4, 2021
Apparatus and methods for compensating for variations in fabrication process of component(s) in a memory
SAMSUNG ELECTRONICS CO LTD5 citations66
US11790982B2Oct 17, 2023
Circuits for power down leakage reduction in random-access memory
SAMSUNG ELECTRONICS CO LTD0 citations61
US11776623B2Oct 3, 2023
Bitline precharge system for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11410720B2Aug 9, 2022
Bitline precharge system for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11290092B1Mar 29, 2022
Level shifter circuits
SAMSUNG ELECTRONICS CO LTD0 citations61
US11271011B2Mar 8, 2022
Method for high performance standard cell design techniques in FinFET based library using local layout effects (LLE)
SAMSUNG ELECTRONICS CO LTD0 citations60
US10304507B2May 28, 2019
Memory providing signal buffering scheme for array and periphery signals and operating method of the same
SAMSUNG ELECTRONICS CO LTD1 citations59
US11017848B2May 25, 2021
Static random-access memory (SRAM) system with delay tuning and control and a method thereof
SAMSUNG ELECTRONICS CO LTD1 citations55
US10651850B2May 12, 2020
Low voltage tolerant ultra-low power edge triggered flip-flop for standard cell library
SAMSUNG ELECTRONICS CO LTD1 citations53
US10715118B2Jul 14, 2020
Flip-flop with single pre-charge node
SAMSUNG ELECTRONICS CO LTD1 citations50
US10803929B2Oct 13, 2020
Static random-access memory with virtual banking architecture, and system and method including the same
SAMSUNG ELECTRONICS CO LTD0 citations45
US10665295B2May 26, 2020
Static random-access memory with virtual banking architecture, and system and method including the same
SAMSUNG ELECTRONICS CO LTD0 citations45
US12567461B2Mar 3, 2026
Memory device and operation to reduce impact of parasitic wire resistance and capacitance
SAMSUNG ELECTRONICS CO LTD0 citations44
US10147493B2Dec 4, 2018
System on-chip (SoC) device with dedicated clock generator for memory banks
SAMSUNG ELECTRONICS CO LTD0 citations39
US10522218B2Dec 31, 2019
Methods and apparatuses to reduce power dissipation in a static random access memory (SRAM) device
SAMSUNG ELECTRONICS CO LTD0 citations36