Inventor
YEH JENG-YA
TW19 patents
⚠️ This page may combine multiple inventors who share the name “YEH JENG-YA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
18 patentsUS10529824B2Jan 7, 2020
Semiconductor device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US11443984B2Sep 13, 2022
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11387321B2Jul 12, 2022
Integrated circuit structure with non-gated well tap cell
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10665673B2May 26, 2020
Integrated circuit structure with non-gated well tap cell
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US12027415B2Jul 2, 2024
Semiconductor device structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11935787B2Mar 19, 2024
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11476156B2Oct 18, 2022
Semiconductor device structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10879393B2Dec 29, 2020
Methods of fabricating semiconductor devices having gate structure with bent sidewalls
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12532533B2Jan 20, 2026
Method for forming semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11908896B2Feb 20, 2024
Integrated circuit structure with non-gated well tap cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11404558B2Aug 2, 2022
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11107810B2Aug 31, 2021
Fin field effect transistor (FinFET) device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10964815B2Mar 30, 2021
CMOS finFET with doped spacers and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12471352B2Nov 11, 2025
Semiconductor device and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US12336272B2Jun 17, 2025
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12550310B2Feb 10, 2026
Gate isolation structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12166034B2Dec 10, 2024
Semiconductor device with CPODE and related methods
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10651289B2May 12, 2020
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49