Inventor
KONG DEXIN
CN54 patents
Patents
50 patentsUS10714569B1Jul 14, 2020
Producing strained nanosheet field effect transistors using a phase change material
IBM12 citations86
US10658583B1May 19, 2020
Forming RRAM cell structure with filament confinement
IBM8 citations84
US10615288B1Apr 7, 2020
Integration scheme for non-volatile memory on gate-all-around structure
IBM7 citations84
US11195755B2Dec 7, 2021
Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors
IBM2 citations73
US11101323B2Aug 24, 2021
RRAM cells in crossbar array architecture
IBM2 citations73
US11011704B2May 18, 2021
Forming RRAM cell structure with filament confinement
IBM3 citations73
US10903421B2Jan 26, 2021
Controlling filament formation and location in a resistive random-access memory device
IBM3 citations73
US10749040B2Aug 18, 2020
Integration scheme for non-volatile memory on gate-all-around structure
IBM3 citations73
US10692203B2Jun 23, 2020
Measuring defectivity by equipping model-less scatterometry with cognitive machine learning
IBM3 citations73
US10686014B2Jun 16, 2020
Semiconductor memory device having a vertical active region
IBM2 citations73
US10559625B1Feb 11, 2020
RRAM cells in crossbar array architecture
IBM3 citations73
US11199505B2Dec 14, 2021
Machine learning enhanced optical-based screening for in-line wafer testing
IBM2 citations70
US12453293B2Oct 21, 2025
Redundant bottom pad and sacrificial via contact for process induced RRAM forming
IBM0 citations63
US12310262B2May 20, 2025
Phase change memory with encapsulated phase change element
IBM0 citations63
US12256653B2Mar 18, 2025
PCM cell with nanoheater surrounded with airgaps
IBM0 citations63
US12033061B2Jul 9, 2024
Capacitor-based synapse network structure with metal shielding between outputs
IBM0 citations63
US11937522B2Mar 19, 2024
Confining filament at pillar center for memory devices
IBM0 citations63
US11877524B2Jan 16, 2024
Nanotip filament confinement
IBM0 citations63
US11812675B2Nov 7, 2023
Filament confinement in resistive random access memory
IBM0 citations63
US11682582B2Jun 20, 2023
Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors
IBM0 citations63
US11430513B1Aug 30, 2022
Non-volatile memory structure and method for low programming voltage for cross bar array
IBM1 citations63
US11362093B2Jun 14, 2022
Co-integration of non-volatile memory on gate-all-around field effect transistor
IBM0 citations63
US11183636B2Nov 23, 2021
Techniques for forming RRAM cells
IBM0 citations63
US11121318B2Sep 14, 2021
Tunable forming voltage for RRAM device
IBM1 citations63
US11101322B2Aug 24, 2021
RRAM cells in crossbar array architecture
IBM0 citations63
US11075200B2Jul 27, 2021
Integrated device with vertical field-effect transistors and hybrid channels
IBM0 citations63
US11043634B2Jun 22, 2021
Confining filament at pillar center for memory devices
IBM0 citations63
US11004751B2May 11, 2021
Vertical transistor having reduced edge fin variation
IBM0 citations63
US10998229B2May 4, 2021
Transistor with improved self-aligned contact
IBM1 citations63
US10971549B2Apr 6, 2021
Semiconductor memory device having a vertical active region
IBM0 citations63
US12310267B2May 20, 2025
ReRAM module with intermediate electrode
IBM0 citations62
US12225833B2Feb 11, 2025
Oxide-based resistive memory having a plasma-exposed bottom electrode
IBM0 citations62
US11856878B2Dec 26, 2023
High-density resistive random-access memory array with self-aligned bottom electrode contact
IBM0 citations62
US11751492B2Sep 5, 2023
Embedded memory pillar
IBM0 citations62
US11647680B2May 9, 2023
Oxide-based resistive memory having a plasma-exposed bottom electrode
IBM0 citations62
US11665987B2May 30, 2023
Integrated switch using stacked phase change materials
IBM0 citations52
US11270768B2Mar 8, 2022
Failure prevention of chip power network
IBM0 citations52
US11239421B2Feb 1, 2022
Embedded BEOL memory device with top electrode pillar
IBM0 citations52
US11221359B2Jan 11, 2022
Determining device operability via metal-induced layer exchange
IBM0 citations52
US11195754B2Dec 7, 2021
Transistor with reduced gate resistance and improved process margin of forming self-aligned contact
IBM0 citations52
US11189724B2Nov 30, 2021
Method of forming a top epitaxy source/drain structure for a vertical transistor
IBM0 citations52
US10886367B2Jan 5, 2021
Forming FinFET with reduced variability
IBM0 citations52
US10804274B2Oct 13, 2020
Co-integration of non-volatile memory on gate-all-around field effect transistor
IBM0 citations52
US10784380B2Sep 22, 2020
Gate-all-around transistor based non-volatile memory devices
IBM0 citations52
US10763118B2Sep 1, 2020
Cyclic selective deposition for tight pitch patterning
IBM0 citations52
US10707127B2Jul 7, 2020
Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors
IBM0 citations52
US10679992B1Jun 9, 2020
Integrated device with vertical field-effect transistors and hybrid channels
IBM0 citations52
US10658590B2May 19, 2020
Techniques for forming RRAM cells
IBM0 citations52
US10586875B2Mar 10, 2020
Gate-all-around transistor based non-volatile memory devices
IBM0 citations52
US11956975B2Apr 9, 2024
BEOL fat wire level ground rule compatible embedded artificial intelligence integration
IBM0 citations51
Showing the top 50 of 54 patents by PatentIndex Score.