Inventor

WEEKS KEITH DORAN

US35 patents

⚠️ This page may combine multiple inventors who share the name “WEEKS KEITH DORAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WEEKS KEITH DORAN

ATOMERA INC

Method of making a semiconductor device with a buried insulating layer formed by annealing a superlattice

Semiconductor device including superlattice structures with reduced defect densities

Method for making superlattice structures with reduced defect densities

Method for making a semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice

Semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice

Method for making a semiconductor device including a superlattice within a recessed etch

Gate-all-around (GAA) device including a superlattice

Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer

Method for making semiconductor device including superlattice with oxygen and carbon monolayers

Semiconductor device including superlattice with oxygen and carbon monolayers

Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer

Semiconductor device including superlattice with O18 enriched monolayers

Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms

Method for making semiconductor device including superlattice with O18 enriched monolayers

Method for making semiconductor device with selective etching of superlattice to define etch stop layer

Method for making superlattice structures with reduced defect densities

Method for making semiconductor device including a superlattice with different non-semiconductor material monolayers

Semiconductor device including a superlattice with different non-semiconductor material monolayers

Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer

Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer

Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer

Method for making a semiconductor superlattices with different non-semiconductor thermal stabilities

Method for making gate-all-around (GAA) device including a superlattice

Method for making semiconductor device including superlattice with oxygen and carbon monolayers

Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms

Semiconductor device including superlattice with O18 enriched monolayers

ASM INC

Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition

Selective deposition of silicon-containing films

Heteroepitaxial deposition over an oxidized surface

Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition

ASM IP HOLDING BV

Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same

Doped semiconductor films and processing

Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same

BAUER MATTHIAS

Selective epitaxial formation of semiconductor films

Selective epitaxial formation of semiconductive films