Inventor

PARK YOUNG-LIM

KR42 patents

⚠️ This page may combine multiple inventors who share the name “PARK YOUNG-LIM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK YOUNG-LIM

SAMSUNG ELECTRONICS CO LTD

Method of forming a phase change memory device

Methods of forming a semiconductor device including a phase change material layer

Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device

Methods of forming phase change memory devices having bottom electrodes

Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed

Phase change memory device including resistant material

Capacitor, semiconductor device and methods of manufacturing the capacitor and the semiconductor device

Semiconductor device electrodes including fluorine

Semiconductor devices and methods for fabricating thereof

Semiconductor device

Semiconductor devices

Integrated circuit device having dielectric layer, and method and apparatus for manufacturing the integrated circuit device

Semiconductor memory device and method of fabricating the same

Semiconductor device and method of fabricating the same

Integrated circuit device and method of fabricating the same

Capacitor, semiconductor device and methods of manufacturing the capacitor and the semiconductor device

Variable resistance non-volatile memory cells and methods of fabricating same

Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors

Semiconductor devices and methods for fabricating thereof

Semiconductor device including capacitor

Semiconductor devices and methods for fabricating thereof

Semiconductor device including capacitor

Semiconductor device

Semiconductor device including capacitor

Semiconductor memory device and method of fabricating the same

Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices

Semiconductor devices and methods of fabricating the same

Methods of forming contact structures and semiconductor devices fabricated using contact structures

Method of forming semiconductor device

Capacitor structure, semiconductor memory device including the structure, and method for manufacturing the structure

Gap filling method and method for forming semiconductor memory device using the same

OH GYUHWAN

Variable resistance memory device and methods of forming the same

Variable resistance memory device and methods of forming the same

Method of forming a semiconductor device having a metal silicide and alloy layers as electrode

PARK YOUNG-LIM

Method of forming variable resistance memory device

Phase change memory device

Methods of forming a semiconductor device including a metal silicon nitride layer

OH GYU-HWAN

Methods of forming multi-level cell of semiconductor memory

Method of fabricating phase-change memory device having TiC layer

AN HYEONG-GEUN

Nonvolatile memory cells having phase changeable patterns therein for data storage

KIM YOUNGKUK

Semiconductor memory devices and methods of fabricating the same

LEE JIN-IL

Methods of forming a phase change memory device