Inventor
PRESS PATRICK
DE15 patents
⚠️ This page may combine multiple inventors who share the name “PRESS PATRICK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
6 patentsUS7741167B2Jun 22, 2010
Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strain
ADVANCED MICRO DEVICES INC26 citations92
US7605045B2Oct 20, 2009
Field effect transistors and methods for fabricating the same
ADVANCED MICRO DEVICES INC7 citations73
US8039335B2Oct 18, 2011
Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strain
ADVANCED MICRO DEVICES INC3 citations62
US7893503B2Feb 22, 2011
Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strain
ADVANCED MICRO DEVICES INC4 citations62
US7745334B2Jun 29, 2010
Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniques
ADVANCED MICRO DEVICES INC4 citations62
US7384877B2Jun 10, 2008
Technique for reducing silicide defects by reducing deleterious effects of particle bombardment prior to silicidation
ADVANCED MICRO DEVICES INC0 citations51
GLOBALFOUNDRIES INC
4 patentsUS7799682B2Sep 21, 2010
Transistor having a locally provided metal silicide region in contact areas and a method of forming the transistor
GLOBALFOUNDRIES INC12 citations84
US7833874B2Nov 16, 2010
Technique for forming an isolation trench as a stress source for strain engineering
GLOBALFOUNDRIES INC0 citations52
US7754554B2Jul 13, 2010
Methods for fabricating low contact resistance CMOS circuits
GLOBALFOUNDRIES INC1 citations52
US8357575B2Jan 22, 2013
Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers
GLOBALFOUNDRIES INC0 citations50