Inventor
TSAI MENG-JIN
TW27 patents
⚠️ This page may combine multiple inventors who share the name “TSAI MENG-JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
24 patentsUS6077784AJun 20, 2000
Chemical-mechanical polishing method
UNITED MICROELECTRONICS CORP61 citations96
US5610743AMar 11, 1997
Liquid crystal display including concentric shapes and radial spokes which has an improved viewing angle
UNITED MICROELECTRONICS CORP58 citations96
US6156640ADec 5, 2000
Damascene process with anti-reflection coating
UNITED MICROELECTRONICS CORP45 citations93
US5920779AJul 6, 1999
Differential gate oxide thickness by nitrogen implantation for mixed mode and embedded VLSI circuits
UNITED MICROELECTRONICS CORP52 citations93
US6281694B1Aug 28, 2001
Monitor method for testing probe pins
UNITED MICROELECTRONICS CORP19 citations92
US6232197B1May 15, 2001
Metal-insulator-metal capacitor
UNITED MICROELECTRONICS CORP33 citations92
US6114220ASep 5, 2000
Method of fabricating a shallow trench isolation
UNITED MICROELECTRONICS CORP21 citations92
US6037201AMar 14, 2000
Method for manufacturing mixed-mode devices
UNITED MICROELECTRONICS CORP29 citations92
US5981379ANov 9, 1999
Method of forming via
UNITED MICROELECTRONICS CORP21 citations92
US5981353ANov 9, 1999
Method of forming a shallow trench isolation region
UNITED MICROELECTRONICS CORP23 citations92
US5926729AJul 20, 1999
Method for forming gate oxide layers of various predefined thicknesses
UNITED MICROELECTRONICS CORP31 citations92
US5913132AJun 15, 1999
Method of forming a shallow trench isolation region
UNITED MICROELECTRONICS CORP21 citations92
US6403487B1Jun 11, 2002
Method of forming separated spacer structures in mixed-mode integrated circuits
UNITED MICROELECTRONICS CORP28 citations91
US5965464AOct 12, 1999
Manufacturing method of double spacer structure for mixed-mode IC
UNITED MICROELECTRONICS CORP20 citations89
US6251748B1Jun 26, 2001
Method of manufacturing shallow trench isolation structure
UNITED MICROELECTRONICS CORP17 citations84
US6140156AOct 31, 2000
Fabrication method of isolation structure photodiode
UNITED MICROELECTRONICS CORP19 citations84
US6001735ADec 14, 1999
Dual damascene technique
UNITED MICROELECTRONICS CORP10 citations74
US6268266B1Jul 31, 2001
Method for forming enhanced FOX region of low voltage device in high voltage process
UNITED MICROELECTRONICS CORP13 citations69
US5500545AMar 19, 1996
Double switching field effect transistor and method of manufacturing it
UNITED MICROELECTRONICS CORP18 citations66
US7335598B2Feb 26, 2008
Chemical-mechanical polishing method
UNITED MICROELECTRONICS CORP3 citations63
US6913993B2Jul 5, 2005
Chemical-mechanical polishing method
UNITED MICROELECTRONICS CORP2 citations63
US6190983B1Feb 20, 2001
Method for fabricating high-voltage device
UNITED MICROELECTRONICS CORP4 citations63
US5937291AAug 10, 1999
Method for forming poly-via connection between load transistor drain and driver transistor gate in SRAM
UNITED MICROELECTRONICS CORP2 citations62
US7947603B2May 24, 2011
Chemical-mechanical polishing method
UNITED MICROELECTRONICS CORP0 citations52