Inventor
PARK IN-SUN
KR47 patents
⚠️ This page may combine multiple inventors who share the name “PARK IN-SUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
34 patentsUS7504725B2Mar 17, 2009
Semiconductor memory device having low-resistance tungsten line and method of manufacturing the semiconductor memory device
SAMSUNG ELECTRONICS CO LTD30 citations92
US5879982AMar 9, 1999
Methods of forming integrated circuit memory devices having improved electrical interconnects therein
SAMSUNG ELECTRONICS CO LTD38 citations91
US6964922B2Nov 15, 2005
Methods for forming metal interconnections for semiconductor devices having multiple metal depositions
SAMSUNG ELECTRONICS CO LTD13 citations84
US6623798B2Sep 23, 2003
Chemical vapor deposition method for depositing silicide and apparatus for performing the same
SAMSUNG ELECTRONICS CO LTD13 citations80
US6747354B2Jun 8, 2004
Semiconductor devices having multilevel interconnections and methods for manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations74
US6673718B1Jan 6, 2004
Methods for forming aluminum metal wirings
SAMSUNG ELECTRONICS CO LTD12 citations73
US7812332B2Oct 12, 2010
Phase change memory device and method of forming the same
SAMSUNG ELECTRONICS CO LTD7 citations72
US6905960B2Jun 14, 2005
Method of forming a contact in a semiconductor device
SAMSUNG ELECTRONICS CO LTD9 citations72
US6844627B2Jan 18, 2005
Metal film semiconductor device and a method for forming the same
SAMSUNG ELECTRONICS CO LTD7 citations72
US6797575B2Sep 28, 2004
Method for forming a polycide structure in a semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations72
US6451691B2Sep 17, 2002
Methods of manufacturing a metal pattern of a semiconductor device which include forming nitride layer at exposed sidewalls of Ti layer of the pattern
SAMSUNG ELECTRONICS CO LTD7 citations72
US7524724B2Apr 28, 2009
Method of forming titanium nitride layer and method of fabricating capacitor using the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7364967B2Apr 29, 2008
Methods of forming storage capacitors for semiconductor devices
SAMSUNG ELECTRONICS CO LTD6 citations63
US11820859B2Nov 21, 2023
Infrared absorbing polymer, infrared absorbing/blocking film, photoelectric device, organic sensor, and electronic device
SAMSUNG ELECTRONICS CO LTD1 citations62
US10263205B2Apr 16, 2019
Organic solar cell and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD1 citations62
US7723182B2May 25, 2010
Storage electrode of a capacitor and a method of forming the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US6740587B2May 25, 2004
Semiconductor device having a metal silicide layer and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations62
US7566667B2Jul 28, 2009
Methods of fabricating a semiconductor device having a barrier metal layer and devices formed thereby
SAMSUNG ELECTRONICS CO LTD2 citations61
US7479434B2Jan 20, 2009
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations61
US7375025B2May 20, 2008
Method for forming a metal silicide layer in a semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations61
US6670268B2Dec 30, 2003
Metal interconnection with low resistance in a semiconductor device and a method of forming the same
SAMSUNG ELECTRONICS CO LTD6 citations61
US7135407B2Nov 14, 2006
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations60
US6806135B2Oct 19, 2004
Method of manufacturing a semiconductor device using a two-step deposition process
SAMSUNG ELECTRONICS CO LTD5 citations60
US6774029B2Aug 10, 2004
Method for forming a conductive film and a conductive pattern of a semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations60
US7037828B2May 2, 2006
Semiconductor device having a capping layer including cobalt and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US12120951B2Oct 15, 2024
Infrared absorbers, infrared absorbing/blocking films and photoelectric devices and organic sensors and electronic devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US11777048B2Oct 3, 2023
Sensors and electronic devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US9754826B2Sep 5, 2017
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9548466B2Jan 17, 2017
Method of forming a thin film and an electronic device
SAMSUNG ELECTRONICS CO LTD1 citations51
US7759159B2Jul 20, 2010
Variable resistance non-volatile memory cells and methods of fabricating same
SAMSUNG ELECTRONICS CO LTD1 citations51
US7005373B2Feb 28, 2006
Method for forming a metal silicide layer in a semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations51
US6797618B2Sep 28, 2004
Method for forming silicide film of a semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations51
US9276214B2Mar 1, 2016
Composition for organic thin film, organic thin film, and electronic device including the organic thin film
SAMSUNG ELECTRONICS CO LTD0 citations41
US7122468B2Oct 17, 2006
Methods of fabricating integrated circuit conductive contact structures including grooves
SAMSUNG ELECTRONICS CO LTD0 citations39