Inventor

PFIRSCH FRANK

DE101 patents

⚠️ This page may combine multiple inventors who share the name “PFIRSCH FRANK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PFIRSCH FRANK

INFINEON TECHNOLOGIES AG

Semiconductor component having a small forward voltage and high blocking ability

Compensation component and process for producing the compensation component

Trench MOS transistor

Reverse-blocking power semiconductor component having a region short-circuited to a drain-side part of a body zone

Power trench transistor

High blocking semiconductor component comprising a drift section

Semiconductor power component with a reduced parasitic bipolar transistor

Semiconductor configuration having trenches for isolating doped regions

Edge termination for a semiconductor component, a schottky diode having an edge termination, and a method for producing the schottky diode

Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone

Power semiconductor component, IGBT and field-effect transistor

Field-effect transistor configuration with a trench-shaped gate electrode and an additional highly doped layer in the body region

IGBT with reduced feedback capacitance

IGBT device and related device having robustness under extreme conditions

Semiconductor diode and IGBT

Edge structure with voltage breakdown in the linear region

Field-effect power transistor

High-voltage diode

Field effect-controllable semiconductor component

Semiconductor device and RC-IGBT with zones directly adjoining a rear side electrode

Semiconductor component and corresponding test method

Bipolar high-voltage power component

Insulated gate bipolar transistor

INFINEON TECHNOLOGIES AUSTRIA

Semiconductor device with a field stop zone

Semiconductor device and a reverse conducting IGBT

Field plate trench transistor and method for producing it

Method for fabricating a semiconductor component

Field plate trench transistor and method for producing it

Semiconductor component

Semiconductor device with a field stop zone and process of producing the same

Method for producing a semiconductor including a foreign material layer

Semiconductor device including a free wheeling diode

Semiconductor component and method

Power semiconductor component with charge compensation structure and method for the fabrication thereof

Trench diffusion isolation in semiconductor devices

PFIRSCH FRANK

High-voltage-resistant semiconductor component having vertically conductive semiconductor body areas and a trench structure

Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor component

Semiconductor component having a transition region

Semiconductor component with a drift region and a drift control region

Semiconductor device having a floating semiconductor zone

SIEMENS AG

Method for producing at least two transsistors in a semiconductor body

Device with a P-N junction and a means of reducing the risk of breakdown of the junction

Method for the manufacturing of a thyristor with defined lateral resistor

Thyristor with integrated dU/dt protection

HIRLER FRANZ

Field plate trench transistor and method for producing it

Depletion MOS transistor and charging arrangement

INFINEON TECHNOLOIGES AG

IGBT with emitter electrode electrically connected with an impurity zone

SCHULZE HANS JOACHIM

Bipolar semiconductor device and manufacturing method

INFINEON TECHNOLOGIES AUSTRIA AG

Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor component

MAUDER ANTON

Circuit and method for driving a transistor component based on a load condition