Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor component

Abstract

A first part of a semiconductor body is provided. Impurities are introduced into the first part of the semiconductor body, The impurities act as recombination centers in the semiconductor body and form a recombination Zone, and the impurities include at least a heavy metal. A second part of the semiconductor body is epitaxially produced on the first part after introducing the impurities in the first part. During epitaxially producing the second part of the semiconductor body on the first part of the semiconductor body, impurities in the first part of the semiconductor body are diffused to the second part of the semiconductor body.

What is claimed is: 
     
       1. A method for producing a semiconductor body comprising:
 providing a first part of the semiconductor body; 
 introducing impurities into the first part of the semiconductor body, wherein the impurities act as recombination centers in the semiconductor body and form a recombination zone; and 
 epitaxially producing a second part of the semiconductor body on the first part after introducing the impurities in the first part, 
 wherein during epitaxially producing the second part of the semiconductor body on the first part of the semiconductor body, impurities in the first part of the semiconductor body are diffused to the second part of the semiconductor body, and 
 wherein the impurities have a diffusion constant of less than 10 −13  cm 2 /s at 1000° C. in the semiconductor body. 
 
     
     
       2. The method according to  claim 1 , wherein the impurities are introduced into the semiconductor body in a locally delimited manner. 
     
     
       3. The method according to  claim 1 , wherein the impurities are introduced into the semiconductor body at a distance from the surfaces of the semiconductor body. 
     
     
       4. The method according to  claim 1 , further comprising diffusing the introduced impurities in the semiconductor body during the epitaxially producing of the second part of the semiconductor body, wherein the diffusion of the introduced impurities during the epitaxy process is slower than the rate of growth of the epitaxial layer. 
     
     
       5. The method according to  claim 1 , wherein the impurities are introduced into a plurality of partial sections of the semiconductor body such that regions without impurities remain between the partial sections. 
     
     
       6. The method according to  claim 1 , wherein introducing the impurities and epitaxially producing the second part are each repeated at least once. 
     
     
       7. The method according to  claim 1 , wherein semiconductor component structures with a drift path between a first electrode at a first surface of the semiconductor body and a second electrode at a second surface of the semiconductor body are formed in the semiconductor body. 
     
     
       8. The method according to  claim 7 , wherein the recombination zone is formed at least partly in the drift path. 
     
     
       9. The method according to  claim 7 , wherein the recombination zone is formed closer to the first electrode than to the second electrode. 
     
     
       10. The method according to  claim 7 , wherein the recombination zone is formed closer to the second electrode than to the first electrode. 
     
     
       11. A method for producing a semiconductor body comprising:
 providing a first part of the semiconductor body; 
 introducing impurities into the first part of the semiconductor body, wherein the impurities act as recombination centers in the semiconductor body and form a recombination zone; 
 epitaxially producing a second part of the semiconductor body on the first part after introducing the impurities in the first part; and 
 diffusing the introduced impurities in the semiconductor body during epitaxially producing the second part, 
 wherein the diffusion of the introduced impurities during the epitaxy process is slower than the rate of growth of the epitaxial layer. 
 
     
     
       12. The method according to  claim 11 , wherein the impurities are introduced into the semiconductor body in a locally delimited manner. 
     
     
       13. The method according to  claim 11 , wherein the impurities are introduced into the semiconductor body at a distance from the surfaces of the semiconductor body. 
     
     
       14. The method according to  claim 11 , wherein the impurities have a diffusion constant of less than 10 cm/s at 1000° C. in the semiconductor body. 
     
     
       15. The method according to  claim 11 , wherein the impurities are introduced by an implantation process. 
     
     
       16. The method according to  claim 11 , wherein the impurities are introduced into a plurality of partial sections of the semiconductor body such that regions without impurities remain between the partial sections. 
     
     
       17. The method according to  claim 11 , wherein introducing the impurities, epitaxially producing the second part, and diffusing the introduced impurities are each repeated at least once. 
     
     
       18. The method according to  claim 11 , wherein semiconductor component structures with a drift path between a first electrode at a first surface of the semiconductor body and a second electrode at a second surface of the semiconductor body are formed in the semiconductor body. 
     
     
       19. The method according to  claim 18 , wherein the recombination zone is formed at least partly in the drift path. 
     
     
       20. The method according to  claim 18 , wherein the recombination zone is formed closer to the first electrode than to the second electrode.