Inventor
PENNY CHRISTOPHER J
US171 patents
⚠️ This page may combine multiple inventors who share the name “PENNY CHRISTOPHER J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
42 patentsUS10229851B2Mar 12, 2019
Self-forming barrier for use in air gap formation
IBM317 citations99
US9837355B2Dec 5, 2017
Method for maximizing air gap in back end of the line interconnect through via landing modification
IBM313 citations99
US9666528B1May 30, 2017
BEOL vertical fuse formed over air gap
IBM430 citations99
US9349687B1May 24, 2016
Advanced manganese/manganese nitride cap/etch mask for air gap formation scheme in nanocopper low-K interconnect
IBM96 citations98
US9305836B1Apr 5, 2016
Air gap semiconductor structure with selective cap bilayer
IBM488 citations98
US9966337B1May 8, 2018
Fully aligned via with integrated air gaps
IBM22 citations94
US9934970B1Apr 3, 2018
Self aligned pattern formation post spacer etchback in tight pitch configurations
IBM22 citations94
US9911651B1Mar 6, 2018
Skip-vias bypassing a metallization level at minimum pitch
IBM26 citations94
US9786760B1Oct 10, 2017
Air gap and air spacer pinch off
IBM22 citations94
US9991156B2Jun 5, 2018
Self-aligned quadruple patterning (SAQP) for routing layouts including multi-track jogs
IBM15 citations93
US9553019B1Jan 24, 2017
Airgap protection layer for via alignment
IBM20 citations93
US9449871B1Sep 20, 2016
Hybrid airgap structure with oxide liner
IBM21 citations92
US11152257B2Oct 19, 2021
Barrier-less prefilled via formation
IBM5 citations84
US11004790B2May 11, 2021
Method of manufacturing an interconnect without dielectric exclusion zones by thermal decomposition of a sacrificial filler material
IBM4 citations84
US10770653B1Sep 8, 2020
Selective dielectric deposition to prevent gouging in MRAM
IBM7 citations84
US10529569B2Jan 7, 2020
Self aligned pattern formation post spacer etchback in tight pitch configurations
IBM5 citations84
US10366952B2Jul 30, 2019
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
IBM5 citations84
US10361157B2Jul 23, 2019
Method of manufacturing self-aligned interconnects by deposition of a non-conformal air-gap forming layer having an undulated upper surface
IBM6 citations84
US10242933B2Mar 26, 2019
Air gap and air spacer pinch off
IBM4 citations84
US10109579B2Oct 23, 2018
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
IBM8 citations84
US10083905B2Sep 25, 2018
Skip-vias bypassing a metallization level at minimum pitch
IBM9 citations84
US9997451B2Jun 12, 2018
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
IBM5 citations84
US9837305B1Dec 5, 2017
Forming deep airgaps without flop over
IBM10 citations84
US9793193B1Oct 17, 2017
Air gap and air spacer pinch off
IBM7 citations84
US9793206B1Oct 17, 2017
Heterogeneous metallization using solid diffusion removal of metal interconnects
IBM8 citations84
US9779944B1Oct 3, 2017
Method and structure for cut material selection
IBM17 citations84
US9780027B2Oct 3, 2017
Hybrid airgap structure with oxide liner
IBM13 citations84
US9607886B1Mar 28, 2017
Self aligned conductive lines with relaxed overlay
IBM6 citations84
US7544609B2Jun 9, 2009
Method for integrating liner formation in back end of line processing
IBM9 citations84
US9711455B2Jul 18, 2017
Method of forming an air gap semiconductor structure with selective cap bilayer
IBM5 citations83
US9685366B1Jun 20, 2017
Forming chamferless vias using thermally decomposable porefiller
IBM12 citations83
US9978560B2May 22, 2018
System and method for performing nano beam diffraction analysis
IBM6 citations80
US11894265B2Feb 6, 2024
Top via with damascene line and via
IBM2 citations73
US11735524B2Aug 22, 2023
Electrical device having conductive lines with air gaps therebetween and interconnects without exclusion zones
IBM3 citations73
US11348060B2May 31, 2022
Increasing cost benefit and energy efficiency with modular delivery drones in inclement weather
IBM2 citations73
US11276639B2Mar 15, 2022
Conductive lines with subtractive cuts
IBM3 citations73
US11195795B1Dec 7, 2021
Well-controlled edge-to-edge spacing between adjacent interconnects
IBM3 citations73
US11195792B2Dec 7, 2021
Top via stack
IBM2 citations73
US11189568B2Nov 30, 2021
Top via interconnect having a line with a reduced bottom dimension
IBM2 citations73
US11171084B2Nov 9, 2021
Top via with next level line selective growth
IBM2 citations73
US11139201B2Oct 5, 2021
Top via with hybrid metallization
IBM2 citations73
US10978343B2Apr 13, 2021
Interconnect structure having fully aligned vias
IBM2 citations73
TESSERA LLC
3 patentsUS11670510B2Jun 6, 2023
Self aligned pattern formation post spacer etchback in tight pitch configurations
TESSERA LLC1 citations73
US11587830B2Feb 21, 2023
Self-forming barrier for use in air gap formation
TESSERA LLC1 citations73
US11574864B2Feb 7, 2023
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
TESSERA LLC2 citations73
TESSERA INC
2 patentsUS11056429B2Jul 6, 2021
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
TESSERA INC4 citations84
US10629529B2Apr 21, 2020
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
TESSERA INC3 citations84
ADEIA SEMICONDUCTOR SOLUTIONS LLC
2 patentsUS12218003B2Feb 4, 2025
Selective ILD deposition for fully aligned via with airgap
ADEIA SEMICONDUCTOR SOLUTIONS LLC2 citations75
US11955424B2Apr 9, 2024
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
ADEIA SEMICONDUCTOR SOLUTIONS LLC1 citations73
YANG CHIH-CHAO
1 patentShowing the top 50 of 171 patents by PatentIndex Score.