Inventor

NIEDERNOSTHEIDE FRANZ JOSEF

DE123 patents

⚠️ This page may combine multiple inventors who share the name “NIEDERNOSTHEIDE FRANZ JOSEF”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NIEDERNOSTHEIDE FRANZ JOSEF

INFINEON TECHNOLOGIES AG

Semiconductor device and fabrication method suitable therefor

Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone

Gate control method of MOS-gated power device

Power semiconductor transistor having fully depleted channel region

Power semiconductor device having fully depleted channel region

Power semiconductor transistor having fully depleted channel region

IGBT with reduced feedback capacitance

Increasing the doping efficiency during proton irradiation

Semiconductor device and fabrication method

Actively tracking switching speed control and regulating switching speed of a power transistor during turn-on

Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor component

Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone

Power semiconductor transistor

Power semiconductor device having fully depleted channel regions

Bipolar transistor device with an emitter having two types of emitter regions

Power semiconductor device having fully depleted channel regions

Bipolar transistor with superjunction structure

Method of manufacturing a bipolar semiconductor switch

Bipolar semiconductor switch and a manufacturing method therefor

Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method

Method for reducing oscillation during turn on of a power transistor by regulating the gate switching speed control of its complementary power transistor

Actively tracking switching speed control and regulating switching speed of a power transistor during turn-on

Actively tracking switching speed control of a power transistor

Vertical semiconductor device

Insulated gate bipolar transistor

Insulated gate bipolar transistor device, semiconductor device and method for forming said devices

Gate control method of MOS-gated power device

High speed diode

Method for the production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone

Method for production of deep p regions in silicon, and semiconductor components produced using the method

Method for setting the breakover voltage of a thyristor

Power semiconductor device having nanometer-scale structure

INFINEON TECHNOLOGIES AUSTRIA

Semiconductor device with a field stop zone

Method for manufacturing a semiconductor substrate including laser annealing

Charge compensation semiconductor devices

Semiconductor device with a field stop zone and process of producing the same

Semiconductor device and fabrication method

Vertical semiconductor device having semiconductor zones for improved operability under dynamic processes

SCHULZE HANS-JOACHIM

Method for forming laterally varying doping concentrations and a semiconductor device

Semiconductor device including a dielectric structure in a trench

Method for producing a buried n-doped semiconductor zone in a semiconductor body and semiconductor component

INFINEON TECHNOLOGIES AUSTRIA AG

Transistor device

Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active area

Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active area

SIEMENS AG

Thyristor provided with integrated circuit-commutated recovery time protection and production method therefor

Thyristor with recovery time voltage surge resistance

MAUDER ANTON

Semiconductor device with trench structures including a recombination structure and a fill structure

PFIRSCH FRANK

Semiconductor device having a floating semiconductor zone

SCHULZE HANS JOACHIM

Bipolar semiconductor device and manufacturing method

NIEDERNOSTHEIDE FRANZ JOSEF

Vertical semiconductor device