Inventor

KANEGAE YOSHIHARU

JP7 patents

⚠️ This page may combine multiple inventors who share the name “KANEGAE YOSHIHARU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HITACHI LTD

3 patents

US7180143B2Feb 20, 2007

Semiconductor device having a gate insulating layer being mainly made of silicon oxynitride (SiON) having a compression strain state as its strain state

HITACHI LTD14 citations83

US7215566B2May 8, 2007

Magnetroresistive random access memory and method of manufacturing the same

HITACHI LTD12 citations81

US7279739B2Oct 9, 2007

Non-volatile semiconductor memory device having nano-dots on a tunnel insulating film

HITACHI LTD4 citations61

KANEGAE YOSHIHARU

1 patent

US8488277B2Jul 16, 2013

Magnetic recording medium and magnetic recorder

KANEGAE YOSHIHARU5 citations65

ELPIDA MEMORY INC

1 patent

US8816478B2Aug 26, 2014

Semiconductor device having penetration electrode penetrating through semiconductor substrate

ELPIDA MEMORY INC3 citations61

RENESAS ELECTRONICS CORP

1 patent

US9503018B2Nov 22, 2016

Semiconductor device

RENESAS ELECTRONICS CORP0 citations51

TSUTSUMI TOSHIAKI

1 patent

US9252793B2Feb 2, 2016

Semiconductor device

TSUTSUMI TOSHIAKI1 citations48