Magnetroresistive random access memory and method of manufacturing the same

Abstract

A magnetic memory includes a TMR element in its memory layer, wherein the TMR element in the memory layer has ferromagnetic layers which are kept in tensile strain, the ferromagnetic layers having either Fe, Co or Ni, and a wiring layer adjacent to each of the ferromagnetic layers includes either Ru, W, Ir, Os or Mo, thereby increasing the magnetization.

1. A magnetic memory using a TMR element in a memory layer, comprising:
 a ferromagnetic layer made of either Fe, Co or Ni and forming part of said TMR element in said memory layer, said ferromagnetic layer being kept in tensile strain; and 
 a wiring layer adjacent to said ferromagnetic layer, said wiring layer including either Ru, W, Ir, Os or Mo. 
 
     
     
       2. A magnetic memory using a TMR element in a memory layer, and having said memory layer disposed at each intersection of upper and lower wiring layers, wherein:
 said TMR element in said memory element includes a ferromagnetic layer which is kept in tensile stain, said ferromagnetic material being made of a material including either Fe, Co or Ni, and 
 each said wiring layer is made of a material including either Ru, W, Ir, Os or Mo in a portion adjacent to said ferromagnetic layer, and made of a material including either Al, Cu, Ag or Au in the remaining wiring portion.