Inventor
KRYLIOUK OLGA
US28 patents
⚠️ This page may combine multiple inventors who share the name “KRYLIOUK OLGA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KRYLIOUK OLGA
6 patentsUS8507304B2Aug 13, 2013
Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)
KRYLIOUK OLGA15 citations82
US8268646B2Sep 18, 2012
Group III-nitrides on SI substrates using a nanostructured interlayer
KRYLIOUK OLGA7 citations80
US8110889B2Feb 7, 2012
MOCVD single chamber split process for LED manufacturing
KRYLIOUK OLGA2 citations62
US9431477B2Aug 30, 2016
Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)
KRYLIOUK OLGA1 citations51
US8222057B2Jul 17, 2012
Crack free multilayered devices, methods of manufacture thereof and articles comprising the same
KRYLIOUK OLGA0 citations51
US8946674B2Feb 3, 2015
Group III-nitrides on Si substrates using a nanostructured interlayer
KRYLIOUK OLGA0 citations48
UNIV FLORIDA
5 patentsUS6350666B2Feb 26, 2002
Method and apparatus for producing group-III nitrides
UNIV FLORIDA94 citations98
US6218280B1Apr 17, 2001
Method and apparatus for producing group-III nitrides
UNIV FLORIDA211 citations97
US7001791B2Feb 21, 2006
GaN growth on Si using ZnO buffer layer
UNIV FLORIDA37 citations91
US6967355B2Nov 22, 2005
Group III-nitride on Si using epitaxial BP buffer layer
UNIV FLORIDA23 citations91
US6906351B2Jun 14, 2005
Group III-nitride growth on Si substrate using oxynitride interlayer
UNIV FLORIDA14 citations79
SU JIE
5 patentsUS9196795B2Nov 24, 2015
Formation of group III-V material layers on patterned substrates
SU JIE6 citations83
US8080466B2Dec 20, 2011
Method for growth of nitrogen face (N-face) polarity compound nitride semiconductor device with integrated processing system
SU JIE9 citations83
US8716049B2May 6, 2014
Growth of group III-V material layers by spatially confined epitaxy
SU JIE4 citations73
US8148241B2Apr 3, 2012
Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films
SU JIE0 citations52
US8765501B2Jul 1, 2014
Formation of group III-V material layers on patterned substrates
SU JIE1 citations51
GLO AB
4 patentsUS9035278B2May 19, 2015
Coalesced nanowire structures with interstitial voids and method for manufacturing the same
GLO AB8 citations84
US9444007B2Sep 13, 2016
Nanopyramid sized opto-electronic structure and method for manufacturing of same
GLO AB13 citations81
US8921141B2Dec 30, 2014
Nanopyramid sized opto-electronic structure and method for manufacturing of same
GLO AB7 citations81
US9570651B2Feb 14, 2017
Coalesced nanowire structures with interstitial voids and method for manufacturing the same
GLO AB4 citations73