Inventor

NAKATA ALANA

US22 patents

⚠️ This page may combine multiple inventors who share the name “NAKATA ALANA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NAKATA ALANA

EFFICIENT POWER CONVERSION CORP

Semiconductor devices with back surface isolation

GaN transistors with polysilicon layers used for creating additional components

Compensated gate MISFET and method for fabricating the same

GaN transistors with polysilicon layers for creating additional components

Enhancement mode GaN HEMT device

GaN transistors with polysilicon layers used for creating additional components

Flip chip interconnection with reduced current density

Isolation structure in gallium nitride devices and integrated circuits

Gate with self-aligned ledge for enhancement mode GaN transistors

Semiconductor devices with back surface isolation

Integrated circuit with matching threshold voltages and method for making same

GaN device with reduced output capacitance and process for making same

Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuits

LIDOW ALEXANDER

Enhancement mode GaN HEMT device and method for fabricating the same

Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same

Semiconductor devices with back surface isolation

Ion implanted and self aligned gate structure for GaN transistors

Enhancement mode gallium nitride transistor with improved gate characteristics

Bumped, self-isolated GaN transistor chip with electrically isolated back surface

EFFICIENT POWER CONV CORP

Gate with self-aligned ledged for enhancement mode GaN transistors

Integrated circuit with matching threshold voltages and method for making same

HAUENSTEIN HENNING M

Semiconductor device package with internal device protection