Inventor
LEE YOOJUNG
KR5 patents
Patents
5 patentsUS8987836B2Mar 24, 2015
Field effect transistor having fin base and at lease one fin protruding from fin base
SAMSUNG ELECTRONICS CO LTD40 citations96
US11157358B2Oct 26, 2021
Memory module, error correction method of memory controller controlling the same, and computing system including the same
SAMSUNG ELECTRONICS CO LTD2 citations69
USRE49375EJan 17, 2023
Field effect transistor having fin base and at least one fin protruding from fin base
SAMSUNG ELECTRONICS CO LTD0 citations61
US11507456B2Nov 22, 2022
Memory module, error correction method of memory controller controlling the same, and computing system including the same
SAMSUNG ELECTRONICS CO LTD1 citations59
USRE48367EDec 22, 2020
Field effect transistor having fin base and at least one fin protruding from fin base
SAMSUNG ELECTRONICS CO LTD0 citations51