Inventor
CHANG KISOO
KR6 patents
⚠️ This page may combine multiple inventors who share the name “CHANG KISOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
5 patentsUS8987836B2Mar 24, 2015
Field effect transistor having fin base and at lease one fin protruding from fin base
SAMSUNG ELECTRONICS CO LTD40 citations96
US9305802B2Apr 5, 2016
Methods of forming semiconductor devices using hard masks
SAMSUNG ELECTRONICS CO LTD5 citations71
US9859163B2Jan 2, 2018
Methods for manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations69
USRE49375EJan 17, 2023
Field effect transistor having fin base and at least one fin protruding from fin base
SAMSUNG ELECTRONICS CO LTD0 citations61
USRE48367EDec 22, 2020
Field effect transistor having fin base and at least one fin protruding from fin base
SAMSUNG ELECTRONICS CO LTD0 citations51