Inventor · disambiguated record
Hong He
Also filed as: HE HONG · HE HONG-YUN
157 granted patents·18 pending applications·470 citations·filing 1995–2024
99Inventor score
Top patents by PatentIndex Score
175 records- 0199US9287135B1Sidewall image transfer process for fin patterningIBM·Filed 2015·Granted Mar 15, 2016·67 cites·20 claims
- 0297US9716038B2Critical dimension shrink through selective metal growth on metal hardmask sidewallsIBM·Filed 2016·Granted Jul 25, 2017·12 cites·1 claims
- 0397US9276013B1Integrated formation of Si and SiGe finsIBM·Filed 2015·Granted Mar 1, 2016·21 cites·20 claims
- 0496US9379221B1Bottom-up metal gate formation on replacement metal gate finFET devicesIBM·Filed 2015·Granted Jun 28, 2016·15 cites·14 claims
- 0596US9368350B1Tone inverted directed self-assembly (DSA) fin patterningIBM·Filed 2015·Granted Jun 14, 2016·12 cites·20 claims
- 0695US9515185B2Silicon germanium-on-insulator FinFETST MICROELECTRONICS INC·Filed 2014·Granted Dec 6, 2016·15 cites·20 claims
- 0795US9431425B1Directly forming SiGe fins on oxideIBM·Filed 2015·Granted Aug 30, 2016·11 cites·10 claims
- 0895US9324830B2Self-aligned contact process enabled by low temperatureIBM·Filed 2014·Granted Apr 26, 2016·12 cites·19 claims
- 0994US9595473B2Critical dimension shrink through selective metal growth on metal hardmask sidewallsIBM·Filed 2015·Granted Mar 14, 2017·7 cites·15 claims
- 1094US9093326B2Electrically isolated SiGe fin formation by local oxidationIBM·Filed 2013·Granted Jul 28, 2015·14 cites·18 claims
- 1192US9881937B2Preventing strained fin relaxationIBM·Filed 2017·Granted Jan 30, 2018·6 cites·10 claims
- 1292US9768272B2Replacement gate FinFET process using a sit process to define source/drain regions, gate spacers and a gate cavityIBM·Filed 2015·Granted Sep 19, 2017·8 cites·14 claims
- 1392US9418900B1Silicon germanium and silicon fins on oxide from bulk waferIBM·Filed 2015·Granted Aug 16, 2016·7 cites·20 claims
- 1492US9331148B1FinFET device with channel strainIBM·Filed 2015·Granted May 3, 2016·6 cites·9 claims
- 1592US9087687B2Thin heterostructure channel deviceADAM THOMAS N·Filed 2011·Granted Jul 21, 2015·10 cites·11 claims
- 1692US8951850B1FinFET formed over dielectricIBM·Filed 2013·Granted Feb 10, 2015·11 cites·15 claims
- 1791US9953916B2Critical dimension shrink through selective metal growth on metal hardmask sidewallsIBM·Filed 2017·Granted Apr 24, 2018·4 cites·20 claims
- 1891US9761699B2Integration of strained silicon germanium PFET device and silicon NFET device for finFET structuresIBM·Filed 2015·Granted Sep 12, 2017·5 cites·13 claims
- 1991US9640640B1FinFET device with channel strainIBM·Filed 2016·Granted May 2, 2017·5 cites·9 claims
- 2091US9634117B2Self-aligned contact process enabled by low temperatureIBM·Filed 2016·Granted Apr 25, 2017·5 cites·20 claims
- 2191US9583626B2Silicon germanium alloy fins with reduced defectsIBM·Filed 2015·Granted Feb 28, 2017·5 cites·11 claims
- 2291US9515089B1Bulk fin formation with vertical fin sidewall profileIBM·Filed 2015·Granted Dec 6, 2016·6 cites·12 claims
- 2391US9496371B1Channel protection during fin fabricationIBM·Filed 2015·Granted Nov 15, 2016·7 cites·20 claims
- 2490US10037944B2Self-aligned contact process enabled by low temperatureIBM·Filed 2017·Granted Jul 31, 2018·4 cites·20 claims
- 2590US9252243B2Gate structure integration scheme for fin field effect transistorsIBM·Filed 2014·Granted Feb 2, 2016·7 cites·15 claims
- 2690US9099401B2Sidewall image transfer with a spin-on hardmaskIBM·Filed 2013·Granted Aug 4, 2015·8 cites·4 claims
- 2790US9041094B2Finfet formed over dielectricIBM·Filed 2013·Granted May 26, 2015·9 cites·15 claims
- 2889US9576979B2Preventing strained fin relaxation by sealing fin endsIBM·Filed 2015·Granted Feb 21, 2017·5 cites·9 claims
- 2987US10615278B2Preventing strained fin relaxationIBM·Filed 2017·Granted Apr 7, 2020·4 cites·3 claims
- 3087US9502411B1Strained finFET device fabricationIBM·Filed 2015·Granted Nov 22, 2016·3 cites·7 claims
- 3187US9064901B1Fin density control of multigate devices through sidewall image transfer processesIBM·Filed 2013·Granted Jun 23, 2015·5 cites·17 claims
- 3287US9054218B2Method of manufacturing a FinFET device using a sacrificial epitaxy region for improved fin merge and FinFET device formed by sameIBM·Filed 2013·Granted Jun 9, 2015·6 cites·16 claims
- 3386US9627263B1Stop layer through ion implantation for etch stopIBM·Filed 2015·Granted Apr 18, 2017·4 cites·6 claims
- 3486US9406746B2Work function metal fill for replacement gate fin field effect transistor processIBM·Filed 2014·Granted Aug 2, 2016·5 cites·15 claims
- 3586US9059002B2Non-merged epitaxially grown MOSFET devicesIBM·Filed 2013·Granted Jun 16, 2015·4 cites·15 claims
- 3685US10168075B2Critical dimension shrink through selective metal growth on metal hardmask sidewallsIBM·Filed 2018·Granted Jan 1, 2019·2 cites·20 claims
- 3785US9496281B2Dual isolation on SSOI waferIBM·Filed 2016·Granted Nov 15, 2016·3 cites·16 claims
- 3884US10396185B2Integration of strained silicon germanium PFET device and silicon NFET device for finFET structuresIBM·Filed 2017·Granted Aug 27, 2019·2 cites·20 claims
- 3984US9768276B2Method and structure of forming FinFET electrical fuse structureIBM·Filed 2015·Granted Sep 19, 2017·3 cites·12 claims
- 4084US9093260B2Thin hetereostructure channel deviceADAM THOMAS N·Filed 2012·Granted Jul 28, 2015·5 cites·10 claims
- 4183US9401372B1Dual isolation on SSOI waferIBM·Filed 2015·Granted Jul 26, 2016·3 cites·10 claims
- 4283US8872244B1Contact structure employing a self-aligned gate capIBM·Filed 2013·Granted Oct 28, 2014·5 cites·9 claims
- 4382US10446670B2Integration of strained silicon germanium PFET device and silicon NFET device for FINFET structuresIBM·Filed 2015·Granted Oct 15, 2019·2 cites·14 claims
- 4482US9570299B1Formation of SiGe nanotubesIBM·Filed 2015·Granted Feb 14, 2017·3 cites·20 claims
- 4581US9728419B2Fin density control of multigate devices through sidewall image transfer processesIBM·Filed 2015·Granted Aug 8, 2017·2 cites·20 claims
- 4680US9530777B2FinFETs of different compositions formed on a same substrateST MICROELECTRONICS INC·Filed 2014·Granted Dec 27, 2016·5 cites·31 claims
- 4779US9349798B1CMOS structures with selective tensile strained NFET fins and relaxed PFET finsIBM·Filed 2015·Granted May 24, 2016·2 cites·3 claims
- 4879US8957478B2Semiconductor device including source/drain formed on bulk and gate channel formed on oxide layerIBM·Filed 2013·Granted Feb 17, 2015·4 cites·3 claims
- 4978US9614057B2Enriched, high mobility strained fin having bottom dielectric isolationIBM·Filed 2014·Granted Apr 4, 2017·2 cites·5 claims
- 5078US9455274B2Replacement fin process in SSOI waferIBM·Filed 2015·Granted Sep 27, 2016·2 cites·9 claims
Showing the top 50 of 175 patent records by PatentIndex Score.
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