Inventor
HSU HSIN-YUN
TW21 patents
⚠️ This page may combine multiple inventors who share the name “HSU HSIN-YUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
14 patentsUS10790142B2Sep 29, 2020
Selective capping processes and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US10770288B2Sep 8, 2020
Selective capping processes and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US11024505B2Jun 1, 2021
Gate structure passivating species drive-in method and structure formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations82
US10854459B2Dec 1, 2020
Gate structure passivating species drive-in method and structure formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations82
US11380542B2Jul 5, 2022
Selective capping processes and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11710638B2Jul 25, 2023
Gate structure passivating species drive-in method and structure formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12278288B2Apr 15, 2025
Fin field-effect transistor device having hybrid work function layer stack
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12051753B2Jul 30, 2024
Fin field-effect transistor device having hybrid work function layer stack
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12021145B2Jun 25, 2024
Fin field-effect transistor device having hybrid work function layer stack
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11830742B2Nov 28, 2023
Selective capping processes and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11380793B2Jul 5, 2022
Fin field-effect transistor device having hybrid work function layer stack
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12354876B2Jul 8, 2025
Gate structure passivating species drive-in method and structure formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11201227B2Dec 14, 2021
Gate structure with barrier layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11145747B2Oct 12, 2021
FinFET structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
IND TECH RES INST
6 patentsUS9751293B2Sep 5, 2017
Laminated substrate separating device and method for separating laminated substrate
IND TECH RES INST2 citations71
US8857600B2Oct 14, 2014
Conveying apparatus
IND TECH RES INST4 citations69
US9902564B1Feb 27, 2018
Roller assembly, step roller thereof, and method for transporting substrate using the same
IND TECH RES INST4 citations66
US9359161B2Jun 7, 2016
Interleaving element for a roll of glass substrate
IND TECH RES INST2 citations60
US10308461B2Jun 4, 2019
Roller assembly and method for transporting a substrate using the same
IND TECH RES INST0 citations50
US9882173B2Jan 30, 2018
Methods for fabricating an organic electro-luminescence device
IND TECH RES INST0 citations38