Inventor
HE MING
US69 patents
⚠️ This page may combine multiple inventors who share the name “HE MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
12 patentsUS8907483B2Dec 9, 2014
Semiconductor device having a self-forming barrier layer at via bottom
GLOBALFOUNDRIES INC7 citations84
US9431294B2Aug 30, 2016
Methods of producing integrated circuits with an air gap
GLOBALFOUNDRIES INC14 citations83
US9318437B1Apr 19, 2016
Moisture scavenging layer for thinner barrier application in beol integration
GLOBALFOUNDRIES INC9 citations83
US8932934B2Jan 13, 2015
Methods of self-forming barrier integration with pore stuffed ULK material
GLOBALFOUNDRIES INC6 citations83
US8753975B1Jun 17, 2014
Methods of forming conductive copper-based structures using a copper-based nitride seed layer without a barrier layer and the resulting device
GLOBALFOUNDRIES INC10 citations83
US9691971B2Jun 27, 2017
Integrated circuits including magnetic tunnel junctions for magnetoresistive random-access memory and methods for fabricating the same
GLOBALFOUNDRIES INC5 citations72
US9087881B2Jul 21, 2015
Electroless fill of trench in semiconductor structure
GLOBALFOUNDRIES INC4 citations72
US10199270B2Feb 5, 2019
Multi-directional self-aligned multiple patterning
GLOBALFOUNDRIES INC5 citations68
US10510675B2Dec 17, 2019
Substrate structure with spatial arrangement configured for coupling of surface plasmons to incident light
GLOBALFOUNDRIES INC2 citations65
USRE49820EJan 30, 2024
Semiconductor device having a self-forming barrier layer at via bottom
GLOBALFOUNDRIES INC0 citations62
US9054052B2Jun 9, 2015
Methods for integration of pore stuffing material
GLOBALFOUNDRIES INC3 citations62
USRE47630EOct 1, 2019
Semiconductor device having a self-forming barrier layer at via bottom
GLOBALFOUNDRIES INC0 citations52
MARVELL WORLD TRADE LTD
4 patentsUS9312060B2Apr 12, 2016
Transformer circuits having transformers with figure eight and double figure eight nested structures
MARVELL WORLD TRADE LTD21 citations92
US9417641B2Aug 16, 2016
Memory effect reduction using low impedance biasing
MARVELL WORLD TRADE LTD5 citations84
US9705454B2Jul 11, 2017
Memory effect reduction using low impedance biasing
MARVELL WORLD TRADE LTD0 citations52
US8823456B2Sep 2, 2014
Cancellation of gain change due to amplifier self-heating
MARVELL WORLD TRADE LTD1 citations52
SAMSUNG ELECTRONICS CO LTD
4 patentsUS12356665B2Jul 8, 2025
Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methods
SAMSUNG ELECTRONICS CO LTD2 citations72
US11705363B2Jul 18, 2023
Fully aligned via integration with selective catalyzed vapor phase grown materials
SAMSUNG ELECTRONICS CO LTD0 citations61
US11978668B2May 7, 2024
Integrated circuit devices including a via and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US12456647B2Oct 28, 2025
Nanosheet transistor devices and related fabrication methods
SAMSUNG ELECTRONICS CO LTD0 citations58
HEWLETT PACKARD DEVELOPMENT CO
3 patentsUS6556581B1Apr 29, 2003
Ethernet to phase shift key converter
HEWLETT PACKARD DEVELOPMENT CO103 citations97
US7895461B2Feb 22, 2011
Clock shifting and prioritization system and method
HEWLETT PACKARD DEVELOPMENT CO5 citations62
US7881682B2Feb 1, 2011
System and method for configuring a wireless module power limit
HEWLETT PACKARD DEVELOPMENT CO0 citations52
MARVELL INT LTD
3 patentsADVANCED RISC MACH LTD
3 patentsUS10672982B1Jun 2, 2020
Fabrication of correlated electron material (CEM) devices
ADVANCED RISC MACH LTD5 citations73
US10566527B2Feb 18, 2020
Method for fabrication of a CEM device
ADVANCED RISC MACH LTD2 citations73
US10854811B2Dec 1, 2020
Formation of correlated electron material (CEM) devices with restored sidewall regions
ADVANCED RISC MACH LTD1 citations62
SIGNOFF DAVID M
2 patentsHE MING
2 patentsLIN SEAN X
2 patentsUS8517769B1Aug 27, 2013
Methods of forming copper-based conductive structures on an integrated circuit device
LIN SEAN X14 citations82
US8673766B2Mar 18, 2014
Methods of forming copper-based conductive structures by forming a copper-based seed layer having an as-deposited thickness profile and thereafter performing an etching process and electroless copper deposition
LIN SEAN X2 citations60
(unassigned)
1 patentTANWAR KUNALJEET
1 patentUNIV LOUISIANA STATE
1 patentTEXACO INC
1 patentINVENSENSE INC
1 patentCOMPAQ INFORMATION TECHNOLOGIE
1 patentCISCO TECH INC
1 patentNEOSE TECHNOLOGIES INC
1 patentDONGGUAN CITY SEIRIOS ELECTRONICS TECH LIMIT
1 patentTENCENT TECH SHENZHEN CO LTD
1 patentCERFE LABS INC
1 patentCHINA INST ATOMIC ENERGY
1 patentLU YUAN
1 patentNANJING YOURAN E COMMERCE CO LTD
1 patentTIMKEN CO
1 patentShowing the top 50 of 69 patents by PatentIndex Score.