Inventor
HONG SA HWAN
KR6 patents
Patents
6 patentsUS11699754B2Jul 11, 2023
Gate structure of vertical FET and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US11295986B2Apr 5, 2022
Vertical field-effect transistor (VFET) devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations70
US11521902B2Dec 6, 2022
Vertical field-effect transistor (VFET) devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11233146B2Jan 25, 2022
Gate structure of vertical FET and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US10818560B2Oct 27, 2020
Vertical field-effect transistor (VFET) devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US11805641B2Oct 31, 2023
Semiconductor device manufacturing method
SAMSUNG ELECTRONICS CO LTD0 citations47