Inventor
JEON CHANG-KI
KR31 patents
⚠️ This page may combine multiple inventors who share the name “JEON CHANG-KI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FAIRCHILD KR SEMICONDUCTOR LTD
19 patentsUS6489652B1Dec 3, 2002
Trench DMOS device having a high breakdown resistance
FAIRCHILD KR SEMICONDUCTOR LTD106 citations97
US6909143B2Jun 21, 2005
Lateral double-diffused MOS transistor having multiple current paths for high breakdown voltage and low on-resistance
FAIRCHILD KR SEMICONDUCTOR LTD73 citations96
US6833585B2Dec 21, 2004
High voltage lateral DMOS transistor having low on-resistance and high breakdown voltage
FAIRCHILD KR SEMICONDUCTOR LTD62 citations96
US7265416B2Sep 4, 2007
High breakdown voltage low on-resistance lateral DMOS transistor
FAIRCHILD KR SEMICONDUCTOR LTD28 citations92
US6888210B2May 3, 2005
Lateral DMOS transistor having reduced surface field
FAIRCHILD KR SEMICONDUCTOR LTD24 citations92
US6268626B1Jul 31, 2001
DMOS field effect transistor with improved electrical characteristics and method for manufacturing the same
FAIRCHILD KR SEMICONDUCTOR LTD25 citations92
US7605040B2Oct 20, 2009
Method of forming high breakdown voltage low on-resistance lateral DMOS transistor
FAIRCHILD KR SEMICONDUCTOR LTD9 citations83
US7655979B2Feb 2, 2010
High voltage gate driver integrated circuit including high voltage junction capacitor and high voltage LDMOS transistor
FAIRCHILD KR SEMICONDUCTOR LTD8 citations80
US6600206B2Jul 29, 2003
High voltage semiconductor device having high breakdown voltage isolation region
FAIRCHILD KR SEMICONDUCTOR LTD15 citations80
US6087244AJul 11, 2000
Methods of forming semiconductor-on-insulator devices including buried layers of opposite conductivity type
FAIRCHILD KR SEMICONDUCTOR LTD12 citations74
US7518209B2Apr 14, 2009
Isolation of a high-voltage diode between a high-voltage region and a low-voltage region of an integrated circuit
FAIRCHILD KR SEMICONDUCTOR LTD6 citations72
US6486512B2Nov 26, 2002
Power semiconductor device having high breakdown voltage and method for fabricating the same
FAIRCHILD KR SEMICONDUCTOR LTD10 citations67
US7777524B2Aug 17, 2010
High voltage semiconductor device having shifters and method of fabricating the same
FAIRCHILD KR SEMICONDUCTOR LTD5 citations62
US7309894B2Dec 18, 2007
High voltage gate driver integrated circuit including high voltage junction capacitor and high voltage LDMOS transistor
FAIRCHILD KR SEMICONDUCTOR LTD5 citations61
US6995453B2Feb 7, 2006
High voltage integrated circuit including bipolar transistor within high voltage island area
FAIRCHILD KR SEMICONDUCTOR LTD6 citations61
US8557674B2Oct 15, 2013
High voltage semiconductor device including field shaping layer and method of fabricating the same
FAIRCHILD KR SEMICONDUCTOR LTD1 citations51
US7906828B2Mar 15, 2011
High-voltage integrated circuit device including high-voltage resistant diode
FAIRCHILD KR SEMICONDUCTOR LTD1 citations51
US7803676B2Sep 28, 2010
Semiconductor device and method of fabricating the same
FAIRCHILD KR SEMICONDUCTOR LTD0 citations50
US7888768B2Feb 15, 2011
Power integrated circuit device having embedded high-side power switch
FAIRCHILD KR SEMICONDUCTOR LTD0 citations40
SAMSUNG ELECTRONICS CO LTD
5 patentsUS6218725B1Apr 17, 2001
Bipolar transistors with isolation trenches to reduce collector resistance
SAMSUNG ELECTRONICS CO LTD21 citations92
US5970356AOct 19, 1999
Method for fabricating a bipolar transistor
SAMSUNG ELECTRONICS CO LTD24 citations92
US5918114AJun 29, 1999
Method of forming vertical trench-gate semiconductor devices having self-aligned source and body regions
SAMSUNG ELECTRONICS CO LTD44 citations92
US5913114AJun 15, 1999
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD21 citations92
US5872377AFeb 16, 1999
Power semiconductor devices having highly integrated unit cells therein
SAMSUNG ELECTRONICS CO LTD10 citations74