P

Inventor

KIM JI-YOUNG

KR261 patents
⚠️ This page may combine multiple inventors who share the name “KIM JI-YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

30 patents
US6710726B2Mar 23, 2004

Serializer-deserializer circuit having increased margins for setup and hold time

SAMSUNG ELECTRONICS CO LTD56 citations95
US7470588B2Dec 30, 2008

Transistors including laterally extended active regions and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD44 citations93
US7408224B2Aug 5, 2008

Vertical transistor structure for use in semiconductor device and method of forming the same

SAMSUNG ELECTRONICS CO LTD25 citations93
US7378312B2May 27, 2008

Recess gate transistor structure for use in semiconductor device and method thereof

SAMSUNG ELECTRONICS CO LTD16 citations93
US7146578B2Dec 5, 2006

Method for creating user-customized menu in a portable radio telephone

SAMSUNG ELECTRONICS CO LTD22 citations93
US7052983B2May 30, 2006

Method of manufacturing a semiconductor device having selective epitaxial silicon layer on contact pads

SAMSUNG ELECTRONICS CO LTD18 citations93
US6884677B2Apr 26, 2005

Recessed gate electrode MOS transistors having a substantially uniform channel length across a width of the recessed gate electrode and methods of forming same

SAMSUNG ELECTRONICS CO LTD20 citations93
US6852620B2Feb 8, 2005

Semiconductor device with self-aligned junction contact hole and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD17 citations93
US6505040B1Jan 7, 2003

Method of making a multiparty conference call on a mobile phone

SAMSUNG ELECTRONICS CO LTD46 citations93
US8346393B2Jan 1, 2013

Control apparatus of multi-finger hand and grasping method using the same

SAMSUNG ELECTRONICS CO LTD24 citations92
US6960507B2Nov 1, 2005

Vertical double-channel silicon-on-insulator transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD42 citations92
US6939765B2Sep 6, 2005

Integration method of a semiconductor device having a recessed gate electrode

SAMSUNG ELECTRONICS CO LTD25 citations92
US10804277B2Oct 13, 2020

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations84
US10204910B2Feb 12, 2019

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US9953981B2Apr 24, 2018

Methods of manufacturing semiconductor devices having buried contacts and related semiconductor devices

SAMSUNG ELECTRONICS CO LTD7 citations84
US9545717B2Jan 17, 2017

Robot hand and humanoid robot having the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US9122275B2Sep 1, 2015

Robot and control method thereof

SAMSUNG ELECTRONICS CO LTD9 citations84
US7555094B2Jun 30, 2009

Counter capable of holding and outputting a count value and phase locked loop having the counter

SAMSUNG ELECTRONICS CO LTD12 citations84
US7485911B2Feb 3, 2009

Semiconductor device having decoupling capacitor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7432143B2Oct 7, 2008

Method for forming gate of semiconductor device

SAMSUNG ELECTRONICS CO LTD9 citations84
US7326975B2Feb 5, 2008

Buried channel type transistor having a trench gate and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7262462B2Aug 28, 2007

Vertical double-channel silicon-on-insulator transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD13 citations84
US7220640B2May 22, 2007

Method of fabricating recess transistor in integrated circuit device and recess transistor in integrated circuit device fabricated by the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US7211482B2May 1, 2007

Method of forming a memory cell having self-aligned contact regions

SAMSUNG ELECTRONICS CO LTD10 citations84
US7163865B2Jan 16, 2007

Method of forming transistor having recess channel in semiconductor memory, and structure thereof

SAMSUNG ELECTRONICS CO LTD15 citations84
US7164170B2Jan 16, 2007

Recess gate transistor structure for use in semiconductor device and method thereof

SAMSUNG ELECTRONICS CO LTD15 citations84
US7154144B2Dec 26, 2006

Self-aligned inner gate recess channel transistor and method of forming the same

SAMSUNG ELECTRONICS CO LTD19 citations84
US7153745B2Dec 26, 2006

Recessed gate transistor structure and method of forming the same

SAMSUNG ELECTRONICS CO LTD11 citations84
US7060574B2Jun 13, 2006

Buried channel type transistor having a trench gate and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US6903404B2Jun 7, 2005

Semiconductor memory device and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD13 citations84

LG HOUSEHOLD & HEALTHCARE LTD

4 patents

NCSOFT CORP

3 patents

LG ELECTRONICS INC

2 patents

KIM DAE-IK

2 patents

KIM JI-YOUNG

2 patents

HONG AUGUSTIN J

1 patent

LG HOUSEHOLD & HEALTH CARE LTD

1 patent

PACIFIC CORP

1 patent

FUNNYFISH INC

1 patent

NEXEN CORP

1 patent

KIM JI YOUNG

1 patent

KANG JIN-GOO

1 patent

Showing the top 50 of 261 patents by PatentIndex Score.