Inventor
KIM JI-YOUNG
KR261 patents
⚠️ This page may combine multiple inventors who share the name “KIM JI-YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
30 patentsUS6710726B2Mar 23, 2004
Serializer-deserializer circuit having increased margins for setup and hold time
SAMSUNG ELECTRONICS CO LTD56 citations95
US7470588B2Dec 30, 2008
Transistors including laterally extended active regions and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD44 citations93
US7408224B2Aug 5, 2008
Vertical transistor structure for use in semiconductor device and method of forming the same
SAMSUNG ELECTRONICS CO LTD25 citations93
US7378312B2May 27, 2008
Recess gate transistor structure for use in semiconductor device and method thereof
SAMSUNG ELECTRONICS CO LTD16 citations93
US7146578B2Dec 5, 2006
Method for creating user-customized menu in a portable radio telephone
SAMSUNG ELECTRONICS CO LTD22 citations93
US7052983B2May 30, 2006
Method of manufacturing a semiconductor device having selective epitaxial silicon layer on contact pads
SAMSUNG ELECTRONICS CO LTD18 citations93
US6884677B2Apr 26, 2005
Recessed gate electrode MOS transistors having a substantially uniform channel length across a width of the recessed gate electrode and methods of forming same
SAMSUNG ELECTRONICS CO LTD20 citations93
US6852620B2Feb 8, 2005
Semiconductor device with self-aligned junction contact hole and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD17 citations93
US6505040B1Jan 7, 2003
Method of making a multiparty conference call on a mobile phone
SAMSUNG ELECTRONICS CO LTD46 citations93
US8346393B2Jan 1, 2013
Control apparatus of multi-finger hand and grasping method using the same
SAMSUNG ELECTRONICS CO LTD24 citations92
US6960507B2Nov 1, 2005
Vertical double-channel silicon-on-insulator transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD42 citations92
US6939765B2Sep 6, 2005
Integration method of a semiconductor device having a recessed gate electrode
SAMSUNG ELECTRONICS CO LTD25 citations92
US10804277B2Oct 13, 2020
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations84
US10204910B2Feb 12, 2019
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US9953981B2Apr 24, 2018
Methods of manufacturing semiconductor devices having buried contacts and related semiconductor devices
SAMSUNG ELECTRONICS CO LTD7 citations84
US9545717B2Jan 17, 2017
Robot hand and humanoid robot having the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US9122275B2Sep 1, 2015
Robot and control method thereof
SAMSUNG ELECTRONICS CO LTD9 citations84
US7555094B2Jun 30, 2009
Counter capable of holding and outputting a count value and phase locked loop having the counter
SAMSUNG ELECTRONICS CO LTD12 citations84
US7485911B2Feb 3, 2009
Semiconductor device having decoupling capacitor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7432143B2Oct 7, 2008
Method for forming gate of semiconductor device
SAMSUNG ELECTRONICS CO LTD9 citations84
US7326975B2Feb 5, 2008
Buried channel type transistor having a trench gate and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7262462B2Aug 28, 2007
Vertical double-channel silicon-on-insulator transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US7220640B2May 22, 2007
Method of fabricating recess transistor in integrated circuit device and recess transistor in integrated circuit device fabricated by the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US7211482B2May 1, 2007
Method of forming a memory cell having self-aligned contact regions
SAMSUNG ELECTRONICS CO LTD10 citations84
US7163865B2Jan 16, 2007
Method of forming transistor having recess channel in semiconductor memory, and structure thereof
SAMSUNG ELECTRONICS CO LTD15 citations84
US7164170B2Jan 16, 2007
Recess gate transistor structure for use in semiconductor device and method thereof
SAMSUNG ELECTRONICS CO LTD15 citations84
US7154144B2Dec 26, 2006
Self-aligned inner gate recess channel transistor and method of forming the same
SAMSUNG ELECTRONICS CO LTD19 citations84
US7153745B2Dec 26, 2006
Recessed gate transistor structure and method of forming the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7060574B2Jun 13, 2006
Buried channel type transistor having a trench gate and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US6903404B2Jun 7, 2005
Semiconductor memory device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD13 citations84
LG HOUSEHOLD & HEALTHCARE LTD
4 patentsUS6689344B2Feb 10, 2004
Patches for teeth whitening
LG HOUSEHOLD & HEALTHCARE LTD140 citations98
US6682721B2Jan 27, 2004
Patches for teeth whitening
LG HOUSEHOLD & HEALTHCARE LTD179 citations98
US6780401B2Aug 24, 2004
Patches for teeth whitening
LG HOUSEHOLD & HEALTHCARE LTD80 citations97
US6946142B2Sep 20, 2005
Multi-layer patches for teeth whitening
LG HOUSEHOLD & HEALTHCARE LTD46 citations92
NCSOFT CORP
3 patentsUSD1053908SDec 10, 2024
Display panel or portion thereof with graphical user interface
NCSOFT CORP10 citations84
USD1050179SNov 5, 2024
Display panel or portion thereof with graphical user interface
NCSOFT CORP12 citations84
USD1050184SNov 5, 2024
Display panel or portion thereof with graphical user interface
NCSOFT CORP9 citations83
LG ELECTRONICS INC
2 patentsKIM DAE-IK
2 patentsKIM JI-YOUNG
2 patentsUS9048329B2Jun 2, 2015
Integrated circuit memory devices having vertical transistor arrays therein and methods of forming same
KIM JI-YOUNG27 citations92
US8541832B2Sep 24, 2013
Integrated circuit memory devices having vertical transistor arrays therein and methods of forming same
KIM JI-YOUNG20 citations92
HONG AUGUSTIN J
1 patentLG HOUSEHOLD & HEALTH CARE LTD
1 patentPACIFIC CORP
1 patentFUNNYFISH INC
1 patentNEXEN CORP
1 patentKIM JI YOUNG
1 patentKANG JIN-GOO
1 patentShowing the top 50 of 261 patents by PatentIndex Score.