Inventor

KINZER DANIEL M

US128 patents

⚠️ This page may combine multiple inventors who share the name “KINZER DANIEL M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KINZER DANIEL M

INT RECTIFIER CORP

High voltage vertical conduction superjunction semiconductor device

MOSgated device with trench structure and remote contact and process for its manufacture

MOSgated trench type power semiconductor with silicon carbide substrate and increased gate breakdown voltage and reduced on-resistance

Commonly housed diverse semiconductor die

Semiconductor high-power mosfet device

III-nitride bidirectional switch

Integrated schottky diode and mosgated device

Power mosfet with integrated drivers in a common package

Process for counter doping N-type silicon in Schottky device Ti silicide barrier

Vertical conduction flip-chip device with bump contacts on single surface

Superjunction device with self compensated trench walls

Trench MOSFET with integrated schottky device and process for its manufacture

Commonly housed diverse semiconductor

Process for manufacture of MOS gated device with reduced mask count

Depletion mode power MOSFET with refractory gate and method of making same

Semiconductor device MOS gated

Surface mount package with improved heat transfer

Termination structure for mosgated device with reduced mask count and process for its manufacture

Depletion mode power MOSFET with refractory gate and method of making same

Photovoltaic isolator and process of manufacture thereof

Bidirectional MOSFET switching circuit with single gate bias

High power MOSFET and integrated control circuit therefor for high-side switch application

Termination structure for semiconductor devices and process for manufacture thereof

Integrated III-nitride power devices

Common MOSFET process for plural devices

Commonly housed diverse semiconductor die

Strip gate poly structure for increased channel width and reduced gate resistance

MOS gated device with self aligned cells

Commonly housed diverse semiconductor die

Amorphous silicon combined with resurf region for termination for MOSgated device

Process for manufacture of MOS gated device with self aligned cells

Process for manufacture of a P-channel MOS gated device with base implant through the contact window

Power transistor device having ultra deep increased concentration region

IGBT with increased ruggedness

Reduced mask process for manufacture of MOS gated devices

High power MOSFET and integrated control circuit therefor for high-side switch application

NAVITAS SEMICONDUCTOR INC

Pulsed level shift and inverter circuits for GaN devices

Bootstrap capacitor charging circuit for GaN devices

Half bridge power conversion circuits using GaN devices

GaN circuit drivers for GaN circuit loads

Half bridge power conversion circuits using GaN devices

Integrated level shifter

Level shift and inverter circuits for GaN devices

Pulsed level shift and inverter circuits for GaN devices

Pulsed level shift and inverter circuits for GaN devices

Half bridge circuit with bootstrap capacitor charging circuit

Half bridge driver circuits

GaN circuit drivers for GaN circuit loads

Integrated bias supply, reference and bias current circuits for GaN devices

NAVITAS SEMICONDUCTOR LTD

Half-bridge circuit using separately packaged GaN power devices