Inventor

HA YONG-HO

KR36 patents

⚠️ This page may combine multiple inventors who share the name “HA YONG-HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HA YONG-HO

SAMSUNG ELECTRONICS CO LTD

Phase-change memory devices with a self-heater structure

Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same

Method and driver for programming phase change memory cell

Multi-layer phase-changeable memory devices

Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the same

Methods of fabricating multi-layer phase-changeable memory devices

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Phase-changeable memory devices including nitrogen and/or silicon dopants

Phase changeable memory devices including nitrogen and/or silicon

Method and driver for programming phase change memory cell

Methods of forming phase change memory devices having bottom electrodes

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

System and method of determining pulse properties of semiconductor device

Phase-changeable memory devices and methods of forming the same

Phase-change material layer and phase-change memory device including the phase-change material layer

Phase-changeable memory devices including an adiabatic layer

Method and driver for programming phase change memory cell

Multi-layer phase-changeable memory devices

Methods of manufacturing phase-changeable memory devices including upper and lower electrodes

Phase-changeable memory devices including phase-changeable materials on silicon nitride layers

Contact structure, a semiconductor device employing the same, and methods of manufacturing the same

Nonvolatile memory device and method of manufacturing the same

Method of forming a chalcogenide compound target

Methods of fabricating semiconductor devices using MOS transistors with nonuniform gate electrode structures

Semiconductor devices and methods of fabricating the same

Semiconductor devices

HA YONG-HO

Shock absorbing shoes with triangle shock absorbing space

Methods for manufacturing a phase-change memory device

Methods for manufacturing a phase-change memory device

Methods of forming phase-changeable memory devices including an adiabatic layer

TSENG WEI-HSIUNG

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

BAEK IN-GYU

Nonvolatile memory cells having oxygen diffusion barrier layers therein

AN HYEONG-GEUN

Nonvolatile memory cells having phase changeable patterns therein for data storage

KWON HYUN-SUK

Method of manufacturing a phase changeable memory unit having an enhanced structure to reduce a reset current

KAKAO CORP

Method for determining targets for transmitting instant messages and apparatus thereof