Inventor
KANG KWANG-YONG
KR36 patents
⚠️ This page may combine multiple inventors who share the name “KANG KWANG-YONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KOREA ELECTRONICS TELECOMM
31 patentsUS5942040AAug 24, 1999
Multi-target manipulator for pulsed laser deposition apparatus
KOREA ELECTRONICS TELECOMM68 citations95
US6933553B2Aug 23, 2005
Field effect transistor using vanadium dioxide layer as channel material and method of manufacturing the field effect transistor
KOREA ELECTRONICS TELECOMM20 citations92
US6034348AMar 7, 2000
Micro etching system using laser ablation
KOREA ELECTRONICS TELECOMM27 citations92
US6653917B2Nov 25, 2003
High-temperature superconductor low-pass filter for suppressing broadband harmonics
KOREA ELECTRONICS TELECOMM37 citations91
US7408217B2Aug 5, 2008
Metal-insulator transition switching transistor and method for manufacturing the same
KOREA ELECTRONICS TELECOMM21 citations89
US7489492B2Feb 10, 2009
Abrupt metal-insulator transition device, circuit for removing high-voltage noise using the abrupt metal-insulator transition device, and electrical and/or electronic system comprising the circuit
KOREA ELECTRONICS TELECOMM9 citations84
US7728327B2Jun 1, 2010
2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material
KOREA ELECTRONICS TELECOMM9 citations82
US6987290B2Jan 17, 2006
Current-jump-control circuit including abrupt metal-insulator phase transition device
KOREA ELECTRONICS TELECOMM16 citations81
US7540004B2May 26, 2009
Ultra-small optical/magnetic head actuator with pivot hinge and Halbach magnet array
KOREA ELECTRONICS TELECOMM7 citations74
US6608949B2Aug 19, 2003
Optical oscillator with milimeterwave frequency
KOREA ELECTRONICS TELECOMM9 citations74
US6280580B1Aug 28, 2001
Method for manufacturing a double-sided high-temperature superconducting oxide thin film having large area
KOREA ELECTRONICS TELECOMM9 citations73
US7692516B2Apr 6, 2010
Phase shifter with photonic band gap structure using ferroelectric thin film
KOREA ELECTRONICS TELECOMM7 citations72
US6417505B1Jul 9, 2002
Near-field optical heterodyne measurement system using near-field fiber-optic probe
KOREA ELECTRONICS TELECOMM8 citations65
US8054249B2Nov 8, 2011
Active-matrix field emission pixel and active-matrix field emission display
KOREA ELECTRONICS TELECOMM2 citations63
US6423473B1Jul 23, 2002
Fabrication method of high temperature superconducting step-edge Josephson junction
KOREA ELECTRONICS TELECOMM4 citations63
US8017268B2Sep 13, 2011
Lithium secondary battery including discharge unit
KOREA ELECTRONICS TELECOMM2 citations62
US7944360B2May 17, 2011
Temperature sensor using abrupt metal-insulator transition (MIT) and alarm comprising the temperature sensor
KOREA ELECTRONICS TELECOMM5 citations62
US7791924B2Sep 7, 2010
Memory device using abrupt metal-insulator transition and method of operating the same
KOREA ELECTRONICS TELECOMM2 citations62
US7755100B2Jul 13, 2010
Packaging apparatus of terahertz device
KOREA ELECTRONICS TELECOMM5 citations62
US6324189B1Nov 27, 2001
Optical device for modulating a high frequency optical signal
KOREA ELECTRONICS TELECOMM2 citations62
US5824953AOct 20, 1998
Coaxial connector for vacuum chamber for microwave and millimeter wave measurement
KOREA ELECTRONICS TELECOMM4 citations62
US8053732B2Nov 8, 2011
Terahertz wave TX/RX module package and method of manufacturing the same
KOREA ELECTRONICS TELECOMM5 citations61
US7767501B2Aug 3, 2010
Devices using abrupt metal-insulator transition layer and method of fabricating the device
KOREA ELECTRONICS TELECOMM2 citations61
US7274058B2Sep 25, 2007
Ferroelectric/paraelectric multilayer thin film, method of forming the same, and high frequency variable device using the same
KOREA ELECTRONICS TELECOMM6 citations61
US7684023B2Mar 23, 2010
Apparatus and method for generating THz wave by heterodyning optical and electrical waves
KOREA ELECTRONICS TELECOMM3 citations58
US7989792B2Aug 2, 2011
Abrupt metal-insulator transition device with parallel MIT material layers
KOREA ELECTRONICS TELECOMM0 citations52
USRE42530EJul 12, 2011
Device using a metal-insulator transition
KOREA ELECTRONICS TELECOMM0 citations52
US7911756B2Mar 22, 2011
Low-voltage noise preventing circuit using abrupt metal-insulator transition device
KOREA ELECTRONICS TELECOMM0 citations52
US7911125B2Mar 22, 2011
Electron emission device using abrupt metal-insulator transition and display including the same
KOREA ELECTRONICS TELECOMM0 citations52
US7773494B2Aug 10, 2010
Optical disk drive adapter
KOREA ELECTRONICS TELECOMM0 citations52
US7580336B2Aug 25, 2009
Optical head having a beam input/output coupler on a planar waveguide
KOREA ELECTRONICS TELECOMM0 citations38