USRE42530EExpiredUtility
Device using a metal-insulator transition
Est. expirySep 17, 2021(expired)· nominal 20-yr term from priority
H10D 30/00H10N 99/03
47
PatentIndex Score
0
Cited by
16
References
55
Claims
Abstract
A switching field effect transistor includes a substrate; a Mott-Brinkman-Rice insulator formed on the substrate, the Mott-Brinkman-Rice insulator undergoing abrupt metal-insulator transition when holes added therein; a dielectric layer formed on the Mott-Brinkman-Rice insulator, the dielectric layer adding holes into the Mott-Brinkman-Rice insulator when a predetermined voltage is applied thereto; a gate electrode formed on the dielectric layer, the gate electrode applying the predetermined voltage to the dielectric layer; a source electrode formed to be electrically connected to a first portion of the Mott-Brinkman-Rice insulator; and a drain electrode formed to be electrically connected to a second portion of the Mott-Brinkman-Rice insulator.
Claims
exact text as granted — not AI-modified1. A switching field effect transistor comprising:
a substrate; a Mott-Brinkman-Rice insulator formed on the substrate, the Mott-Brinkman-Rice insulator undergoing abrupt metal-insulator transition when holes add therein; a dielectric layer formed on the Mott-Brinkman-Rice insulator, the dielectric layer adds holes into the Mott-Brinkman-Rice insulator when a predetermined voltage is applied thereto; a gate electrode formed on the dielectric layer, the gate electrode applying the predetermined voltage to the dielectric layer; a source electrode formed to be electrically connected to a first portion of the Mott-Brinkman-Rice insulator; and a drain electrode formed to be electrically connected to a second portion of the Mott-Brinkman-Rice insulator.
2. The switching field effect transistor of claim 1 , wherein the substrate is formed of a material selected from the group consisting of SrTiO 3 , Oxide materials, Silicon on Insulator (SOI), and Silicon.
3. The switching filed effect transistor of claim 1 , wherein the Mott-Brinkman-Rice insulator is formed of a material selected from the group consisting of LaTiO 3 , YTiO 3 , and R 1-x A x TiO 3 (0≦x≦0.1), where R is a cation with trivalent rare-earch ions (Y, La) and A is a cation with divalent alkali-earth ions (Ca, Sr).
4. The switching filed effect transistor of claim 1 , wherein the Mott-Brinkman-Rice insulator is formed of a material, h-BaTiO 3 .
5. The switching field effect transistor of claim 1 , wherein the Mott-Brinkman-Rice insulator is formed of a material selected from the group consisting of Ca 2 RuO 4 , Ca 2-x Sr x RuO 4 (0≦x≦0.05), Ca 2 IrO 4 , and Ca 2-x Sr x IrO 4 (0≦x≦0.05).
6. The switching field effect transistor of claim 1 , wherein the Mott-Brinkman-Rice insulator is formed of a material selected from the group consisting of V 2 O 3 , (Cr x V 1-x ) 2 O 3 (0≦×0.05), CaVO 3 , Ca 1-x Sr x VO 3 (0≦x≦0.05), and YVO 3 .
7. The switching field effect transistor of claim 1 , wherein the dielectric layer is formed of Ba 1-x Sr x TiO 3 (0≦x≦0.05), Pb(Zr 1-x Ti x )O 3 (0≦x≦0.05), and SrBi 2 Ta 2 O 9 .
8. The switching field effect transistor of claim 1 , wherein the dielectric layer is formed of a material selected from the group consisting of SiO 2 , Si 3 N 4 , Al 2 O 3 , Y 2 O 3 , La 2 O 3 , Ta 2 O 5 , TiO 2 , HfO 2 , ZrO 2 .
9. The switching field effect transistor of claim 1 , wherein the source electrode and the drain electrode are separated from each other by the dielectric layer.
10. A device using metal-insulator transition, wherein a paramagnetic insulator is abruptly phase-transited to metal due to an energy change between electrons to form a conductive channel, wherein the effective mass m*/m of carriers generated due to the metal-insulator transition can be expressed by:
m
*
m
=
1
1
-
k
2
ρ
4
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
11. The device using metal-insulator transition of claim 10, wherein the paramagnetic insulator has a bound and metallic electron structure.
12. The device using metal-insulator transition of claim 10, wherein the carriers generated due to the metal-insulator transition are electrons.
13. The device using metal-insulator transition of claim 10, wherein the energy change is caused by implantation of holes.
14. The device using metal-insulator transition of claim 10, wherein the paramagnetic insulator is formed of a material selected from the group consisting of LaTiO 3 , YTiO 3 , and R 1-x A x TiO 3 (0≦x≦0.1) (where R is a cation with trivalent rare-earth ions (Y, La) and A is a cation with divalent alkali-earth ions (Ca, Sr)), h-BaTiO 3 , Ca 2 RuO 4 , Ca 2-x Sr x RuO 4 (0≦x≦0.05), Ca 2 IrO 4 , and Ca 2-x Sr x IrO 4 (0≦x≦0.05), V 2 O 3 , (Cr x V 1-x ) 2 O 3 (0≦x≦0.05), CaVO 3 , Ca 1-x Sr x VO 3 (0≦x≦0.05), and YVO 3 .
15. A device using metal-insulator transition, wherein a paramagnetic insulator is abruptly phase-transited to metal due to implantation of holes to form a conductive channel, wherein the effective mass, m*/m of carriers generated due to the metal-insulator transition can be expressed by:
m
*
m
=
1
1
-
k
2
ρ
4
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
16. The device using metal-insulator transition of claim 15, wherein the paramagnetic insulator has a bound and metallic electron structure.
17. The device using metal-insulator transition of claim 15, wherein the carriers generated due to the metal-insulator transition are electrons.
18. The device using metal-insulator transition of claim 15, wherein the paramagnetic insulator is formed of a material selected from the group consisting of LaTiO 3 , YTiO 3 , and R 1-x A x TiO 3 (0≦x≦0.1) (where R is a cation with trivalent rare-earth ions (Y, La) and A is a cation with divalent alkali-earth ions (Ca, Sr)), h-BaTiO 3 , Ca 2 RuO 4 , Ca 2-x Sr x RuO 4 (0≦x≦0.05), Ca 2 IrO 4 , and Ca 2-x Sr x IrO 4 (0≦x≦0.05), V 2 O 3 , (Cr x V 1-x ) 2 O 3 (0≦x≦0.05), CaVO 3 , Ca 1-x Sr x VO 3 (0≦x≦0.05), and YVO 3 .
19. A device using metal-insulator transition, wherein holes are implanted into a paramagnetic insulator having a bound and metallic electron structure to form a conductive channel, wherein the effective mass m*/m of carriers generated due to the metal-insulator transition can be expressed by:
m
*
m
=
1
1
-
k
2
ρ
4
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
20. The device using metal-insulator transition of claim 19, wherein the carriers generated due to the metal-insulator transition are electrons.
21. The device using metal-insulator transition of claim 19, wherein the conductive channel is formed by abruptly transiting the phase of the paramagnetic insulator to metal.
22. The device using metal-insulator transition of claim 19, wherein the paramagnetic insulator is formed of a material selected from the group consisting of LaTiO 3 , YTiO 3 , and R 1-x A x TiO 3 (0≦x≦0.1) (where R is a cation with trivalent rare-earth ions (Y, La) and A is a cation with divalent alkali-earth ions (Ca, Sr)), h-BaTiO 3 , Ca 2 RuO 4 , Ca 2-x Sr x RuO 4 (0≦x≦0.05), Ca 2 IrO 4 , and Ca 2-x Sr x IrO 4 (0≦x≦0.05), V 2 O 3 , (Cr x V 1-x ) 2 O 3 (0≦x≦0.05), CaVO 3 , Ca 1-x Sr x VO 3 (0≦x≦0.05), and YVO 3 .
23. A device using metal-insulator transition, wherein a paramagnetic insulator having a bound and metallic electron structure undergoes abrupt transition to metal due to an energy change between electrons caused by implantation of holes to form a conductive channel, wherein the effective mass m*/m of carriers generated due to the metal-insulator transition can be expressed by:
m
*
m
=
1
1
-
k
2
ρ
4
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
24. The device using metal-insulator transition of claim 23, wherein the carriers generated due to the metal-insulator transition are electrons.
25. The device using metal-insulator transition of claim 23, wherein the paramagnetic insulator is formed of a material selected from the group consisting of LaTiO 3 , YTiO 3 , and R 1-x A x TiO 3 (0≦x≦0.1) (where R is a cation with trivalent rare-earth ions (Y, La) and A is a cation with divalent alkali-earth ions (Ca, Sr)), h-BaTiO 3 , Ca 2 RuO 4 , Ca 2-x Sr x RuO 4 (0≦x≦0.05), Ca 2 IrO 4 , and Ca 2-x Sr x IrO 4 (0≦x≦0.05), V 2 O 3 , (Cr x V 1-x ) 2 O 3 (0≦x≦0.05), CaVO 3 , Ca 1-x Sr x VO 3 (0≦x≦0.05), and YVO 3 .
26. A device using metal-insulator transition comprising:
a paramagnetic insulator forming a conductive channel by abruptly transiting the phase of the paramagnetic insulator to metal due to an energy change between electrons; and an electrode making the energy change occur in the insulator, wherein the effective mass m*/m of carriers generated due to the metal-insulator transition can be expressed by:
m
*
m
=
1
1
-
k
2
ρ
4
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
27. The device using metal-insulator transition of claim 26, wherein the paramagnetic insulator has a bound and metallic electron structure.
28. The device using metal-insulator transition of claim 26, wherein the carriers generated due to the metal-insulator transition are electrons.
29. The device using metal-insulator transition of claim 26, wherein the energy change is caused by implantation of holes.
30. The device using metal-insulator transition of claim 26, further comprising at least one electrode formed on the paramagnetic insulator, the electrode applying a predetermined voltage to the conductive channel.
31. A device using metal-insulator transition comprising:
a paramagnetic insulator forming a conductive channel by abruptly transiting the phase of the paramagnetic insulator to metal due to an energy change between electrons; a first electrode making the energy change occur in the paramagnetic insulator; and a second electrode formed on the paramagnetic insulator, the second electrode applying a predetermined voltage to the conductive channel, wherein the effective mass m*/m of carriers generated due to the metal-insulator transition can be expressed by:
m
*
m
=
1
1
-
k
2
ρ
4
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
32. The device using metal-insulator transition of claim 31, wherein the paramagnetic insulator has a bound and metallic electron structure.
33. The device using metal-insulator transition of claim 31, wherein the carriers generated due to the metal-insulator transition are electrons.
34. The device using metal-insulator transition of claim 31, wherein the energy change is caused by implantation of holes.
35. The device using metal-insulator transition of claim 31, wherein the paramagnetic insulator is formed of a material selected from the group consisting of LaTiO 3 , YTiO 3 , and R 1-x A x TiO 3 (0≦x≦0.1) (where R is a cation with trivalent rare-earth ions (Y, La) and A is a cation with divalent alkali-earth ions (Ca, Sr)), h-BaTiO 3 , Ca 2 RuO 4 , Ca 2-x Sr x RuO 4 (0≦x≦0.05), Ca 2 IrO 4 , and Ca 2-x Sr x IrO 4 (0≦x≦0.05), V 2 O 3 , (Cr x V 1-x ) 2 O 3 (0≦x≦0.05), CaVO 3 , Ca 1-x Sr x VO 3 (0≦x≦0.05), and YVO 3 .
36. A device using metal-insulator transition comprising:
a paramagnetic insulator forming a conductive channel by abruptly transiting the phase of the paramagnetic insulator to metal due to an energy change between electrons; a first electrode making the energy change occur in the paramagnetic insulator; and two second electrodes insulated from the first electrode and electrically connected to each other by the conductive channel, wherein the effective mass m*/m of carriers generated due to the metal-insulator transition can be expressed by:
m
*
m
=
1
1
-
k
2
ρ
4
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
37. The device using metal-insulator transition of claim 36, wherein the paramagnetic insulator has a bound and metallic electron structure.
38. The device using metal-insulator transition of claim 36, wherein the carriers generated due to the metal-insulator transition are electrons.
39. The device using metal-insulator transition of claim 36, wherein the energy change is caused by implantation of holes.
40. The device using metal-insulator transition of claim 36, wherein the paramagnetic insulator is formed of a material selected from the group consisting of LaTiO 3 , YTiO 3 , and R 1-x A x TiO 3 (0≦x≦0.1) (where R is a cation with trivalent rare-earth ions (Y, La) and A is a cation with divalent alkali-earth ions (Ca, Sr)), h-BaTiO 3 , Ca 2 RuO 4 , Ca 2-x Sr x RuO 4 (0≦x≦0.05), Ca 2 IrO 4 , and Ca 2-x Sr x IrO 4 (0≦x≦0.05), V 2 O 3 , (Cr x V 1-x ) 2 O 3 (0≦x≦0.05), CaVO 3 , Ca 1-x Sr x VO 3 (0≦x≦0.05), and YVO 3 .
41. A device using metal-insulator transition comprising:
a paramagnetic insulator forming a conductive channel by abruptly transiting the phase of the paramagnetic insulator to metal due to an energy change between electrons; and a compound adding holes into the paramagnetic insulator when a predetermined voltage is applied to the compound, wherein the holes are generated when a first element of the compound is substituted with a second element having a different atomic structure from the first element, and the holes are added to the paramagnetic insulator, wherein the effective mass m*/m of carriers generated due to the metal-insulator transition can be expressed by:
m
*
m
=
1
1
-
k
2
ρ
4
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
42. The device using metal-insulator transition of claim 41, wherein the paramagnetic insulator has a bound and metallic electron structure.
43. The device using metal-insulator transition of claim 41, wherein the carriers generated due to the metal-insulator transition are electrons.
44. The device using metal-insulator transition of claim 41, wherein the paramagnetic insulator is formed of a material selected from the group consisting of LaTiO 3 , YTiO 3 , and R 1-x A x TiO 3 (0≦x≦0.1) (where R is a cation with trivalent rare-earth ions (Y, La) and A is a cation with divalent alkali-earth ions (Ca, Sr)), h-BaTiO 3 , Ca 2 RuO 4 , Ca 2-x Sr x RuO 4 (0≦x≦0.05), Ca 2 IrO 4 , and Ca 2-x Sr x IrO 4 (0≦x≦0.05), V 2 O 3 , (Cr x V 1-x ) 2 O 3 (0≦x≦0.05), CaVO 3 , Ca 1-x Sr x VO 3 (0≦x≦0.05), and YVO 3 .
45. The device using metal-insulator transition of claim 41, wherein the compound is formed of at least one material selected from the group consisting of Ba 1-x Sr x TiO 3 (0≦x≦0.05), Pb(Zr 1-x Ti x )O 3 (0≦x≦0.05), and SrBi 2 Ta 2 O 9 .
46. A device using metal-insulator transition, comprising:
a paramagnetic insulator formed of at least one material selected from the group consisting of LaTiO 3 , YTiO 3 , and R 1-x A x TiO 3 (0≦x≦0.1) (where R is a cation with trivalent rare-earth ions (Y, La) and A is a cation with a divalent alkali-earth ions (Ca, Sr)), h-BaTiO 3 , Ca 2 RuO 4 , Ca 2-x Sr x RuO 4 (0≦x≦0.05), Ca 2 IrO 4 , and Ca 2-x Sr x IrO 4 (0≦x≦0.05), V 2 O 3 , (Cr x V 1-x ) 2 O 3 (0≦x≦0.05), CaVO 3 , Ca 1-x Sr x VO 3 (0≦x≦0.05), and YVO 3 ; and a compound formed of at least one material selected from the group consisting of Ba 1-x Sr x TiO 3 (0≦x≦0.05), Pb(Zr 1-x Ti x )O 3 (0≦x≦0.05), and SrBi 2 Ta 2 O 9 , wherein holes included in the compound are added to the insulator, wherein the effective mass m*/m of carriers generated due to the metal-insulator transition can be expressed by:
m
*
m
=
1
1
-
k
2
ρ
4
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
47. A field effect transistor using metal-insulator transition, comprising:
a paramagnetic insulator forming a conductive channel by abruptly transiting the phase of the paramagnetic insulator to metal due to an energy change between electrons; a gate electrode formed on one side of the insulator, the gate electrode applying a predetermined voltage to the paramagnetic insulator to induce the energy change; and a source electrode and a drain electrode formed to be electrically connected to each other by the conductive channel, wherein the effective mass m*/m of carriers generated due to the metal-insulator transition can be expressed by:
m
*
m
=
1
1
-
k
2
ρ
4
wherein k denotes a ratio between a Coulomb energy exerted between electrons and the maximum Coulomb energy, and ρ is a band filling factor, and the band filling factor is equal to or greater than 0.95 and less than 1.
48. The field effect transistor using metal-insulator transition of claim 47, wherein the paramagnetic insulator has a bound and metallic electron structure.
49. The field effect transistor using metal-insulator transition of claim 47, wherein the carriers generated due to the metal-insulator transition are electrons.
50. The field effect transistor using metal-insulator transition of claim 47, wherein the energy change is caused by implantation of holes.
51. The field effect transistor using metal-insulator transition of claim 50, wherein a voltage is applied to the gate electrode to form a low concentration of holes causing the abrupt metal-insulator transition.
52. The field effect transistor using metal-insulator transition of claim 47, wherein the paramagnetic insulator is formed of a material selected from the group consisting a LaTiO 3 , YTiO 3 , and R 1-x A x TiO 3 (0≦x≦0.1) (where R is a cation with trivalent rare-earth ions (Y, La) and A is a cation with divalent alkali-earth ions (Ca, Sr)), h-BaTiO 3 , Ca 2 RuO 4 , Ca 2-x Sr x RuO 4 (0≦x≦0.05), Ca 2 IrO 4 , and Ca 2-x Sr x IrO 4 (0≦x≦0.05), V 2 O 3 , (Cr x V 1-x ) 2 O 3 (0≦x≦0.05), CaVO 3 , Ca 1-x Sr x VO 3 (0≦x≦0.05), and YVO 3 .
53. The field effect transistor using metal-insulator transition of claim 47, further comprising a gate insulation layer formed between the paramagnetic insulator and the gate electrode.
54. The field effect transistor using metal-insulator transition of claim 53, wherein the gate insulation layer is formed of at least one material selected from the group consisting of Ba 1-x Sr x TiO 3 (0≦x≦0.05), Pb(Zr 1-x Ti x )O 3 (0≦x≦0.05), and SrBi 2 Ta 2 O 9 .
55. The field effect transistor using metal-insulator transition of claim 53, wherein the gate insulation layer is formed of at least one material selected from the group consisting of SiO 2 , Si 3 N 4 , Al 2 O 3 , Y 2 O 3 , La 2 O 3 , Ta 2 O 5 , HfO 2 , and ZrO 2 .Cited by (0)
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