Inventor · disambiguated record
Kwang Yong Kang
Also filed as: KANG KWANG Y · KANG KWANG-YONG
37 granted patents·25 pending applications·410 citations·filing 1991–2012
97Inventor score
Files withKOREA ELECTRONICS TELECOMM39KIM SUNGIL3KIM HYUN TAK2SONG YOON HO2ELECTRONICS & TELECOMM RES1
Top patents by PatentIndex Score
62 records- 0195US6624463B2Switching field effect transistor using abrupt metal-insulator transitionFiled 2002·Granted Sep 23, 2003·90 cites·9 claims
- 0291US6653917B2High-temperature superconductor low-pass filter for suppressing broadband harmonicsKOREA ELECTRONICS TELECOMM·Filed 2001·Granted Nov 25, 2003·37 cites·11 claims
- 0387US7540004B2Ultra-small optical/magnetic head actuator with pivot hinge and Halbach magnet arrayKOREA ELECTRONICS TELECOMM·Filed 2005·Granted May 26, 2009·7 cites·21 claims
- 0485US8730567B2Terahertz continuous wave generatorKIM SUNGIL·Filed 2011·Granted May 20, 2014·8 cites·9 claims
- 0584US5942040AMulti-target manipulator for pulsed laser deposition apparatusKOREA ELECTRONICS TELECOMM·Filed 1997·Granted Aug 24, 1999·68 cites·13 claims
- 0680US7489492B2Abrupt metal-insulator transition device, circuit for removing high-voltage noise using the abrupt metal-insulator transition device, and electrical and/or electronic system comprising the circuitKOREA ELECTRONICS TELECOMM·Filed 2008·Granted Feb 10, 2009·9 cites·32 claims
- 0779US8305221B2Programmable MIT sensor using the abrupt MIT device, and alarm apparatus and secondary battery anti-explosion circuit including the MIT sensorKIM HYUN-TAK·Filed 2007·Granted Nov 6, 2012·8 cites·26 claims
- 0878US6933553B2Field effect transistor using vanadium dioxide layer as channel material and method of manufacturing the field effect transistorKOREA ELECTRONICS TELECOMM·Filed 2003·Granted Aug 23, 2005·20 cites·9 claims
- 0977US7692516B2Phase shifter with photonic band gap structure using ferroelectric thin filmKOREA ELECTRONICS TELECOMM·Filed 2005·Granted Apr 6, 2010·7 cites·10 claims
- 1077US7274058B2Ferroelectric/paraelectric multilayer thin film, method of forming the same, and high frequency variable device using the sameKOREA ELECTRONICS TELECOMM·Filed 2005·Granted Sep 25, 2007·6 cites·11 claims
- 1173US8053732B2Terahertz wave TX/RX module package and method of manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2009·Granted Nov 8, 2011·5 cites·16 claims
- 1273US8054249B2Active-matrix field emission pixel and active-matrix field emission displayKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Nov 8, 2011·2 cites·5 claims
- 1373US7408217B2Metal-insulator transition switching transistor and method for manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2004·Granted Aug 5, 2008·21 cites·4 claims
- 1472US8017268B2Lithium secondary battery including discharge unitKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Sep 13, 2011·2 cites·15 claims
- 1571US8957441B2Integrated antenna device module for generating terahertz continuous wave and fabrication method thereofJUN DONG SUK·Filed 2011·Granted Feb 17, 2015·3 cites·11 claims
- 1671US7755100B2Packaging apparatus of terahertz deviceKOREA ELECTRONICS TELECOMM·Filed 2008·Granted Jul 13, 2010·5 cites·12 claims
- 1769US7944360B2Temperature sensor using abrupt metal-insulator transition (MIT) and alarm comprising the temperature sensorKOREA ELECTRONICS TELECOMM·Filed 2006·Granted May 17, 2011·5 cites·12 claims
- 1869US6987290B2Current-jump-control circuit including abrupt metal-insulator phase transition deviceKOREA ELECTRONICS TELECOMM·Filed 2004·Granted Jan 17, 2006·16 cites·9 claims
- 1969US6608949B2Optical oscillator with milimeterwave frequencyKOREA ELECTRONICS TELECOMM·Filed 2002·Granted Aug 19, 2003·9 cites·2 claims
- 2068US8390538B2Active-matrix field emission pixelSONG YOON HO·Filed 2011·Granted Mar 5, 2013·2 cites·10 claims
- 2165US7728327B22-terminal semiconductor device using abrupt metal-insulator transition semiconductor materialKOREA ELECTRONICS TELECOMM·Filed 2004·Granted Jun 1, 2010·9 cites·4 claims
- 2261US7684023B2Apparatus and method for generating THz wave by heterodyning optical and electrical wavesKOREA ELECTRONICS TELECOMM·Filed 2007·Granted Mar 23, 2010·3 cites·9 claims
- 2361US6034348AMicro etching system using laser ablationKOREA ELECTRONICS TELECOMM·Filed 1997·Granted Mar 7, 2000·27 cites·10 claims
- 2460US7767501B2Devices using abrupt metal-insulator transition layer and method of fabricating the deviceKOREA ELECTRONICS TELECOMM·Filed 2005·Granted Aug 3, 2010·2 cites·20 claims
- 2557US2013146770A1Terahertz continuous wave system and method of obtaining three-dimensional image thereofKOREA ELECTRONICS TELECOMM·Filed 2012·Application pending·0 cites
- 2656US5230483AReel torque device for video cassette tape recorderGOLD STAR CO·Filed 1991·Granted Jul 27, 1993·10 cites·4 claims
- 2754US7773494B2Optical disk drive adapterKOREA ELECTRONICS TELECOMM·Filed 2007·Granted Aug 10, 2010·0 cites·8 claims
- 2854US2013153757A1Waveguide photomixerKIM TAEYONG·Filed 2012·Application pending·0 cites
- 2953US7911125B2Electron emission device using abrupt metal-insulator transition and display including the sameKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Mar 22, 2011·0 cites·17 claims
- 3053US6417505B1Near-field optical heterodyne measurement system using near-field fiber-optic probeKOREA ELECTRONICS TELECOMM·Filed 2000·Granted Jul 9, 2002·8 cites·9 claims
- 3152US7791924B2Memory device using abrupt metal-insulator transition and method of operating the sameKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Sep 7, 2010·2 cites·6 claims
- 3252US2009011145A1Method of Manufacturing Vanadium Oxide Thin FilmKOREA ELECTRONICS TELECOMM·Filed 2006·Application pending·0 cites
- 3352US2009141387A1Nanoprobe-based heating apparatus and heat-assisted magnetic recording head using the sameKOREA ELECTRONICS TELECOMM·Filed 2008·Application pending·0 cites
- 3451US7911756B2Low-voltage noise preventing circuit using abrupt metal-insulator transition deviceKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Mar 22, 2011·0 cites·23 claims
- 3550US7989792B2Abrupt metal-insulator transition device with parallel MIT material layersKOREA ELECTRONICS TELECOMM·Filed 2007·Granted Aug 2, 2011·0 cites·18 claims
- 3650US6324189B1Optical device for modulating a high frequency optical signalKOREA ELECTRONICS TELECOMM·Filed 2000·Granted Nov 27, 2001·2 cites·17 claims
- 3749US6280580B1Method for manufacturing a double-sided high-temperature superconducting oxide thin film having large areaKOREA ELECTRONICS TELECOMM·Filed 1999·Granted Aug 28, 2001·9 cites·6 claims
- 3847USRE42530EDevice using a metal-insulator transitionKOREA ELECTRONICS TELECOMM·Filed 2005·Granted Jul 12, 2011·0 cites·55 claims
- 3947US2010193824A12-terminal semiconductor device using abrupt metal-insulator transition semiconductor materialKIM HYUN TAK·Filed 2010·Application pending·0 cites
- 4046US7580336B2Optical head having a beam input/output coupler on a planar waveguideKOREA ELECTRONICS TELECOMM·Filed 2005·Granted Aug 25, 2009·0 cites·20 claims
- 4146US2010149640A1Tunable diffraction grating apparatusKOREA ELECTRONICS TELECOMM·Filed 2009·Application pending·0 cites
- 4245US2010092183A1Frequency tunable terahertz continuous wave generatorKOREA ELECTRONICS TELECOMM·Filed 2009·Application pending·0 cites
- 4345US2007136737A1Metal-polymer composite hub and small form factor optical disk for information storage including the sameRYU HO JUN·Filed 2006·Application pending·0 cites
- 4445US2006290259A1Field emission device and field emission display device using the sameSONG YOON H·Filed 2005·Application pending·0 cites
- 4544US2010134372A1Thz-band folded dipole antenna having high input impedanceKOREA ELECTRONICS TELECOMM·Filed 2009·Application pending·0 cites
- 4644US2008121946A1Method of forming sensor for detecting gases and biochemical materials, integrated circuit having the sensor, and method of manufacturing the integrated circuitYOUN DOO HYEB·Filed 2007·Application pending·0 cites
- 4744US2006121147A1Jig used in forming cover layer of small form factor optical disk and method of forming cover layer in small form factor optical disk using the sameRYN HO J·Filed 2005·Application pending·0 cites
- 4843US2008277763A1Abrupt Metal-Insulator Transition Wafer, and Heat Treatment Apparatus and Method For the WaferKOREA ELECTRONICS TELECOMM·Filed 2006·Application pending·0 cites
- 4939US2010134936A1Circuit for protecting electrical and/or electronic system by using abrupt metal-insulator transition device and electrical and/or electronic system comprising the circuitKOREA ELECTRONICS TELECOMM·Filed 2006·Application pending·0 cites
- 5039US2008252196A1Active-Matrix Field Emission DisplaySONG YOON HO·Filed 2006·Application pending·0 cites
Showing the top 50 of 62 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →