2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material

Abstract

Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2 eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.

1 . An abrupt metal-insulator transition (MIT) semiconductor material layer having a semiconductor energy gap and an impurity level (a hole or an electron), generating an abrupt MIT from an insulator to metal at a predetermined voltage, and emitting light according to an application of a voltage. 
   
   
       2 . The abrupt MIT semiconductor material layer of  claim 1 , wherein the abrupt MIT semiconductor material layer has a peak of photo-luminescence (PL) at a wavelength corresponding to the energy gap by irradiating a laser beam, and the intensity of the peak of PL is reduced by the abrupt MIT, and the intensity of PL corresponding to a wavelength below the peak of PL increases. 
   
   
       3 . The abrupt MIT semiconductor material layer of  claim 1 , wherein the abrupt MIT semiconductor material layer comprises p-type semiconductor elements (group type III-V and II-VI). 
   
   
       4 . The abrupt MIT semiconductor material layer of  claim 3 , wherein the abrupt MIT semiconductor material layer comprises p-type GaAs. 
   
   
       5 . The abrupt MIT semiconductor material layer of  claim 1 , wherein the abrupt MIT semiconductor material layer comprises n-type semiconductor elements (group type III-V and II-VI). 
   
   
       6 . The abrupt MIT semiconductor material layer of  claim 1 , wherein the abrupt MIT semiconductor material layer is used in at least one of a light emitting diode (LED), a light emitting device, and an accelerator for discharging light. 
   
   
       7 . A light emitting device comprising:
 a substrate;   the abrupt MIT semiconductor material layer of  claim 1  disposed on the substrate; and   a first electrode layer and a second electrode layer facing each other on the abrupt MIT semiconductor material layer and spaced apart from each other.   
   
   
       8 . The light emitting device of  claim 7 , wherein the abrupt MIT semiconductor material layer comprises p-type semiconductor elements (group type III-V and II-VI). 
   
   
       9 . The light emitting device of  claim 7 , wherein the abrupt MIT semiconductor material layer comprises n-type semiconductor elements (group type III-V and II-VI). 
   
   
       10 . The light emitting device of  claim 7 , wherein the abrupt MIT semiconductor material layer is used in at least one of an LED, a light emitting device, and an accelerator for discharging light. 
   
   
       11 . The light emitting device of  claim 7 , further comprising: a buffer layer disposed between the substrate and the abrupt MIT semiconductor material layer. 
   
   
       12 . The light emitting device of  claim 7 , wherein the first electrode layer has a structure in which an electrode is disposed in the left of the abrupt MIT semiconductor material layer and partially covers a part of an upper portion of a semiconductor, and the second electrode layer has the same structure as the first electrode layer except that an electrode is disposed in the right of the abrupt MIT semiconductor material layer. 
   
   
       13 . A light emitting device comprising:
 a substrate;   a first electrode layer disposed on the substrate;   the abrupt MIT semiconductor material layer of  claim 1  disposed on the first electrode layer; and   a second electrode layer disposed on the abrupt MIT semiconductor material layer.   
   
   
       14 . The light emitting device of  claim 13 , wherein the substrate comprises sapphire, Si, GaAs, and a metal board. 
   
   
       15 . The light emitting device of  claim 13 , further comprising: a buffer layer disposed between the substrate and the first electrode layer. 
   
   
       16 . The light emitting device of  claim 13 , wherein the abrupt MIT semiconductor material layer comprises p-type semiconductor elements (group type III-V and II-VI). 
   
   
       17 . The light emitting device of  claim 13 , wherein the abrupt MIT semiconductor material layer comprises n-type semiconductor elements (group type III-V and II-VI). 
   
   
       18 . The light emitting device of  claim 13 , wherein the second electrode layer comprises an indium tin oxide (ITO) transparent electrode. 
   
   
       19 . The light emitting device of  claim 13 , further comprising: a buffer layer disposed between the substrate and the first electrode layer,
 wherein the second electrode layer is a transparent electrode and covers an entire surface of an upper portion of the abrupt MIT semiconductor material layer.