Inventor · disambiguated record
Byung-Gyu Chae
Also filed as: CHAE BYUNG G · CHAE BYUNG GYU
22 granted patents·14 pending applications·123 citations·filing 2003–2025
94Inventor score
Files withKOREA ELECTRONICS TELECOMM21ELECTRONICS & TELECOMMUNICATIONS RES INST6CHAE BYUNG GYU3KIM HYUN TAK2ELECTONICS AND TELECOMM RES IN1
Top patents by PatentIndex Score
36 records- 0189US11699242B2System and method for digital hologram synthesis and process using deep learningELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2021·Granted Jul 11, 2023·2 cites·20 claims
- 0289US8247806B2Field effect transistor having graphene channel layerCHAE BYUNG-GYU·Filed 2009·Granted Aug 21, 2012·22 cites·12 claims
- 0384US11768463B2Digital hologram display apparatus and displaying method of digital holographic imageELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2020·Granted Sep 26, 2023·1 cites·20 claims
- 0480US7489492B2Abrupt metal-insulator transition device, circuit for removing high-voltage noise using the abrupt metal-insulator transition device, and electrical and/or electronic system comprising the circuitKOREA ELECTRONICS TELECOMM·Filed 2008·Granted Feb 10, 2009·9 cites·32 claims
- 0579US8305221B2Programmable MIT sensor using the abrupt MIT device, and alarm apparatus and secondary battery anti-explosion circuit including the MIT sensorKIM HYUN-TAK·Filed 2007·Granted Nov 6, 2012·8 cites·26 claims
- 0678US6933553B2Field effect transistor using vanadium dioxide layer as channel material and method of manufacturing the field effect transistorKOREA ELECTRONICS TELECOMM·Filed 2003·Granted Aug 23, 2005·20 cites·9 claims
- 0773US7408217B2Metal-insulator transition switching transistor and method for manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2004·Granted Aug 5, 2008·21 cites·4 claims
- 0872US8017268B2Lithium secondary battery including discharge unitKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Sep 13, 2011·2 cites·15 claims
- 0971US12399355B23D optical microscope device of small form factor optical systemELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 1069US10650555B2Imaging system and image reconstruction method using the sameELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2018·Granted May 12, 2020·1 cites·14 claims
- 1169US7944360B2Temperature sensor using abrupt metal-insulator transition (MIT) and alarm comprising the temperature sensorKOREA ELECTRONICS TELECOMM·Filed 2006·Granted May 17, 2011·5 cites·12 claims
- 1269US6987290B2Current-jump-control circuit including abrupt metal-insulator phase transition deviceKOREA ELECTRONICS TELECOMM·Filed 2004·Granted Jan 17, 2006·16 cites·9 claims
- 1365US7728327B22-terminal semiconductor device using abrupt metal-insulator transition semiconductor materialKOREA ELECTRONICS TELECOMM·Filed 2004·Granted Jun 1, 2010·9 cites·4 claims
- 1463US8995037B2Holographic display apparatus capable of steering view windowCHAE BYUNG GYU·Filed 2012·Granted Mar 31, 2015·2 cites·17 claims
- 1560US7767501B2Devices using abrupt metal-insulator transition layer and method of fabricating the deviceKOREA ELECTRONICS TELECOMM·Filed 2005·Granted Aug 3, 2010·2 cites·20 claims
- 1660US2025316195A1Varifocal extended reality image device and method for providing imageELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2025·Application pending·0 cites
- 1758US8031021B2Oscillation circuit based on metal-insulator transition device and method of driving the oscillation circuitKOREA ELECTRONICS TELECOMM·Filed 2007·Granted Oct 4, 2011·1 cites·18 claims
- 1857US2024378772A1Apparatus and method for acquiring super-resolution holotomographic imagesELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2023·Application pending·0 cites
- 1955US2010071751A1Photo-induced metal-insulator-transition material complex for solar cell, solar cell and solar cell module comprising the sameKOREA ELECTRONICS TELECOMM·Filed 2009·Application pending·0 cites
- 2054US7929308B2Power device package having enhanced heat dissipationKOREA ELECTRONICS TELECOMM·Filed 2009·Granted Apr 19, 2011·0 cites·9 claims
- 2153US7911125B2Electron emission device using abrupt metal-insulator transition and display including the sameKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Mar 22, 2011·0 cites·17 claims
- 2253US2015234350A1Digital holographic display method and apparatusKOREA ELECTRONICS TELECOMM·Filed 2014·Application pending·0 cites
- 2352US7791924B2Memory device using abrupt metal-insulator transition and method of operating the sameKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Sep 7, 2010·2 cites·6 claims
- 2452US2009011145A1Method of Manufacturing Vanadium Oxide Thin FilmKOREA ELECTRONICS TELECOMM·Filed 2006·Application pending·0 cites
- 2551US7911756B2Low-voltage noise preventing circuit using abrupt metal-insulator transition deviceKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Mar 22, 2011·0 cites·23 claims
- 2651US2015085331A1Wide-viewing angle holographic display apparatusKOREA ELECTRONICS TELECOMM·Filed 2014·Application pending·0 cites
- 2750US7989792B2Abrupt metal-insulator transition device with parallel MIT material layersKOREA ELECTRONICS TELECOMM·Filed 2007·Granted Aug 2, 2011·0 cites·18 claims
- 2847US2010193824A12-terminal semiconductor device using abrupt metal-insulator transition semiconductor materialKIM HYUN TAK·Filed 2010·Application pending·0 cites
- 2945US2009208639A1Method of forming vanadium trioxide thin film showing abrupt metal-insulator transitionELECTONICS AND TELECOMM RES IN·Filed 2007·Application pending·0 cites
- 3044US8031022B2Oscillation circuit including MIT device and method of adjusting oscillation frequency of the oscillation circuitKOREA ELECTRONICS TELECOMM·Filed 2008·Granted Oct 4, 2011·0 cites·17 claims
- 3144US2011304403A1Oscillation circuit based on metal-insulator transition device and method of driving the oscillation circuitLEE YONG-WOOK·Filed 2011·Application pending·0 cites
- 3243US2008277763A1Abrupt Metal-Insulator Transition Wafer, and Heat Treatment Apparatus and Method For the WaferKOREA ELECTRONICS TELECOMM·Filed 2006·Application pending·0 cites
- 3343US2012019883A1Holographic displays with high resolutionCHAE BYUNG GYU·Filed 2011·Application pending·0 cites
- 3439US2010134936A1Circuit for protecting electrical and/or electronic system by using abrupt metal-insulator transition device and electrical and/or electronic system comprising the circuitKOREA ELECTRONICS TELECOMM·Filed 2006·Application pending·0 cites
- 3539US2009091003A1Insulator undergoing abrupt metal-insulator transition, method of manufacturing the insulator, and device using the insulatorELECTRONICS & TELECOMM RES·Filed 2006·Application pending·0 cites
- 3635US2006231872A1Field effect transistor using insulator-semiconductor transition material layer as channel material and method of manufacturing the sameKIM HYUN T·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →