Inventor

LEE JANG-EUN

KR55 patents

⚠️ This page may combine multiple inventors who share the name “LEE JANG-EUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEE JANG-EUN

SAMSUNG ELECTRONICS CO LTD

Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods

Resistive memory devices including selected reference memory cells

Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier

Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier

Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulates

Resistive memory devices including selected reference memory cells

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Method of forming via structures and method of fabricating phase change memory devices incorporating such via structures

Magnetic tunnel junction and memory device including the same

Method of forming a quantum dot and a gate electrode using the same

Methods of forming titanium nitride composite layers using composite gases having increasing TiCl4 to NH3 ratios

Dual perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic random access memory applications

Resistive memory devices including selected reference memory cells operating responsive to read operations

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Resistive memory devices including selected reference memory cells operating responsive to read operations

Method of manufacturing semiconductor device having transition metal oxide layer and related device

Multi-state resistive memory element, multi-bit resistive memory cell, operating method thereof, and data processing system using the memory element

Method of writing to MRAM devices

Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same

Semiconductor device having a graphene film and method for fabricating thereof

Resistive memory devices and methods of forming resistive memory devices

Magnetic random access memory device and method of forming the same

Method and system for providing magnetic junctions using thermally assisted spin transfer torque switching

Nonvolatile memory devices using variable resistors as storage elements and methods of operating the same

Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulates

Semiconductor devices having resistive memory elements

Method and system for providing a bulk perpendicular magnetic anisotropy free layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications

Magnetic memory device

Magnetic memory device and method of fabricating the same

Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof

Magnetic random access memory device and method of forming the same

Semiconductor memory device and method of fabricating the same

Semiconductor device

Magnetic memory device and method of fabricating the same

Magnetic random access memory (MRAM) and method of manufacturing the same

Nonvolatile memory devices and methods of forming the same

PARK JEONG HEON

Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same

Magnetic tunneling junction devices, memories, memory systems, and electronic devices

Magnetic tunneling junction devices, memories, memory systems, and electronic devices

Magnetic tunneling junction devices, memories, memory systems, and electronic devices

Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same

JEONG JUN-HO

Methods of forming pattern structures

Method of fabricating semiconductor device

SAMSUNG ELECTRONICS CO INC

Method of forming multilayer titanium nitride film by multiple step chemical vapor deposition process and method of manufacturing semiconductor device using the same

BAEK IN-GYU

Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods

LEE JANG-EUN

Method for forming minute pattern and method for forming semiconductor memory device using the same

SHIN HEE-JU

Method for forming magnetic tunnel junction structure and method for forming magnetic random access memory using the same

YIM EUN-KYUNG

Nonvolatile memory devices and methods of forming the same

APALKOV DMYTRO

Method and system for setting a pinned layer in a magnetic tunneling junction

LIM WOO-CHANG

Magnetic device