Inventor

BRANDES GEORGE R

US50 patents

⚠️ This page may combine multiple inventors who share the name “BRANDES GEORGE R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BRANDES GEORGE R

CREE INC

Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same

Light emission device and method utilizing multiple emitters and multiple phosphors

Semi-insulating GaN and method of making the same

Solid state lighting apparatuses and related methods

Solid state lighting apparatuses and related methods

Vicinal gallium nitride substrate for high quality homoepitaxy

Free-standing (Al, Ga, In)N and parting method for forming same

III-V nitride substrate boule and method of making and using the same

Pendeo epitaxial structures and devices

III-V nitride substrate boule and method of making and using the same

LED light bulbs

Vicinal gallium nitride substrate for high quality homoepitaxy

LED light bulbs

LED light bulbs

III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier

High voltage switching devices and process for forming same

Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same

Orientation of electronic devices on mis-cut substrates

Vicinal gallium nitride substrate for high quality homoepitaxy

Laser diode orientation on mis-cut substrates

Vicinal gallium nitride substrate for high quality homoepitaxy

High voltage switching devices and process for forming same

ADVANCED TECH MATERIALS

III-V nitride substrate boule and method of making and using the same

Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same

Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices

Carbon fiber-based field emission devices

Carbon fiber-based field emission devices

Fluid storage and dispensing system

Compact low-noise dynodes incorporating semiconductor secondary electron emitting materials

Integrated circuit devices and methods employing amorphous silicon carbide resistor materials

Laser system utilizing sorbent-based gas storage and delivery system

Silicon carbide epitaxial layers grown on substrates offcut towards &lt;1100&gt;

Silicon carbide epitaxial layers grown on substrates offcut towards &lt;1{overscore (1)}00&gt;

Integrated circuit devices and methods employing amorphous silicon carbide resistor materials

Amorphous silicon carbide thin film coating

BRANDES GEORGE R

LED light bulbs

Light emission device

LED thermal management system and method

Optoelectronic device with upconverting luminophoric medium

Electronic device including circuitry comprising open failure-susceptible components, and open failure-actuated anti-fuse pathway

Light emission device and method utilizing multiple emitters

FLYNN JEFFREY S

III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates

High voltage switching devices and process for forming same

High voltage switching devices and process for forming same

MEDENDORP JR NICHOLAS W

Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same

Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same

CANDESCENT TECH CORP

Electron-emitting devices utilizing electron-emissive particles which typically contain carbon

Electron emitters coated with carbon containing layer

(unassigned)

Electron lithography using a photocathode

CANDESCENT TECHNOLOGIES COPORA

Fabrication of electron emitters coated with material such as carbon

Silicon carbide epitaxial layers grown on substrates offcut towards <1100>

Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00>