Inventor · disambiguated record
Michael A. Mastro
Also filed as: MASTRO MICHAEL · MASTRO MICHAEL A · MASTRO MICHAEL ANTHONY
22 granted patents·5 pending applications·126 citations·filing 2003–2025
94Inventor score
Top patents by PatentIndex Score
27 records- 0195US8900939B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlKUB FRANCIS J·Filed 2014·Granted Dec 2, 2014·17 cites·5 claims
- 0294US8384129B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlUS NAVY·Filed 2010·Granted Feb 26, 2013·19 cites·25 claims
- 0393US8653550B2Inverted light emitting diode having plasmonically enhanced emissionMASTRO MICHAEL A·Filed 2011·Granted Feb 18, 2014·13 cites·11 claims
- 0492US11996840B1Light controlled switch moduleUS GOV SEC NAVY·Filed 2023·Granted May 28, 2024·2 cites·20 claims
- 0592US7928471B2Group III-nitride growth on silicon or silicon germanium substrates and method and devices thereforUS NAVY·Filed 2006·Granted Apr 19, 2011·21 cites·38 claims
- 0691US8254086B2Two-step synthesis of manganese oxide nanostructures on carbon for supercapacitor applicationsMASTRO MICHAEL A·Filed 2010·Granted Aug 28, 2012·10 cites·13 claims
- 0786US9111786B1Complementary field effect transistors using gallium polar and nitrogen polar III-nitride materialKUB FRANCIS J·Filed 2014·Granted Aug 18, 2015·4 cites·8 claims
- 0885US9018056B2Complementary field effect transistors using gallium polar and nitrogen polar III-nitride materialKUB FRANCIS J·Filed 2014·Granted Apr 28, 2015·4 cites·5 claims
- 0985US8648390B2Transistor with enhanced channel charge inducing material layer and threshold voltage controlKUB FRANCIS J·Filed 2013·Granted Feb 11, 2014·6 cites·31 claims
- 1084US8779456B2Inverted light-emitting diode having plasmonically enhanced emissionMASTRO MICHAEL A·Filed 2013·Granted Jul 15, 2014·4 cites·13 claims
- 1180US2025338640A1Low resistance light controlled semiconductor switch (lcss)US GOV SEC NAVY·Filed 2025·Application pending·0 cites
- 1278US12376388B2Low resistance photoconductive semiconductor switch (PCSS)US GOV SEC NAVY·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 1375US8237152B2White light emitting device based on polariton laserMASTRO MICHAEL A·Filed 2009·Granted Aug 7, 2012·5 cites·27 claims
- 1474US7790230B2Metal chloride seeded growth of electronic and optical materialsUS NAVY·Filed 2008·Granted Sep 7, 2010·2 cites·16 claims
- 1572US6906351B2Group III-nitride growth on Si substrate using oxynitride interlayerUNIV FLORIDA·Filed 2003·Granted Jun 14, 2005·14 cites·7 claims
- 1670US10494738B2Growth of crystalline materials on two-dimensional inert materialsUS GOV SEC NAVY·Filed 2019·Granted Dec 3, 2019·0 cites·3 claims
- 1770US8445383B2Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devicesHOBART KARL D·Filed 2008·Granted May 21, 2013·5 cites·16 claims
- 1864US10266963B2Growth of crystalline materials on two-dimensional inert materialsNEPAL NEERAJ·Filed 2014·Granted Apr 23, 2019·0 cites·4 claims
- 1961US12512370B2Neural network based prediction of semiconductor device responseUS GOV SEC NAVY·Filed 2022·Granted Dec 30, 2025·0 cites·15 claims
- 2060US12446249B2Polarization-engineered heterogeneous semiconductor heterostructuresUS GOV SEC NAVY·Filed 2022·Granted Oct 14, 2025·0 cites·23 claims
- 2156US9105499B1Complementary field effect transistors using gallium polar and nitrogen polar III-nitride materialKUB FRANCIS J·Filed 2015·Granted Aug 11, 2015·0 cites·12 claims
- 2254US2025275205A1P-type spinel structures as a p-n heteroepitaxial interface to b-ga2o3US GOV SEC NAVY·Filed 2025·Application pending·0 cites
- 2353US12243916B2Polarization-engineered heterogeneous semiconductor heterostructuresUS GOV SEC NAVY·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
- 2444US2012141799A1Film on Graphene on a Substrate and Method and Devices ThereforKUB FRANCIS·Filed 2011·Application pending·0 cites
- 2544US2010316342A1Photonic crystal based optical modulator integrated for use in electronic circuitsCASEY JAMES A·Filed 2009·Application pending·0 cites
- 2643US2014264261A1Light emitting device on metal foam substrateMASTRO MICHAEL A·Filed 2014·Application pending·0 cites
- 2741US11448824B2Devices with semiconductor hyperbolic metamaterialsUS GOV SEC NAVY·Filed 2016·Granted Sep 20, 2022·0 cites·18 claims
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