P

Inventor

LEE YI-JING

TW87 patents
⚠️ This page may combine multiple inventors who share the name “LEE YI-JING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

40 patents
US9859380B2Jan 2, 2018

FinFETs with strained well regions

TAIWAN SEMICONDUCTOR MFG CO LTD205 citations99
US9601342B2Mar 21, 2017

FinFETs with strained well regions

TAIWAN SEMICONDUCTOR MFG CO LTD288 citations99
US9548303B2Jan 17, 2017

FinFET devices with unique fin shape and the fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1,304 citations99
US9768178B2Sep 19, 2017

Semiconductor device, static random access memory cell and manufacturing method of semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations93
US10490552B2Nov 26, 2019

FinFET device having flat-top epitaxial features and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD16 citations86
US10804163B2Oct 13, 2020

Method of metal gate formation and structures formed by the same

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10515858B1Dec 24, 2019

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10510753B2Dec 17, 2019

Integrated circuit and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10084069B2Sep 25, 2018

Apparatus and method for FinFETs

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9825036B2Nov 21, 2017

Structure and method for semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9780174B2Oct 3, 2017

Methods for forming semiconductor regions in trenches

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US11916071B2Feb 27, 2024

Semiconductor device having epitaxy source/drain regions

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11508627B2Nov 22, 2022

Method of metal gate formation and structures formed by the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11315837B2Apr 26, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11056578B2Jul 6, 2021

Method of forming shaped source/drain epitaxial layers of a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11037826B2Jun 15, 2021

Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10546784B2Jan 28, 2020

Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10516037B2Dec 24, 2019

Method of forming shaped source/drain epitaxial layers of a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10510868B2Dec 17, 2019

Fin Field-Effect Transistors and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10504993B2Dec 10, 2019

FinFET semiconductor device with germanium diffusion over silicon fins

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10355105B2Jul 16, 2019

Fin field-effect transistors and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10170375B2Jan 1, 2019

FinFET devices with unique fin shape and the fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10164023B2Dec 25, 2018

FinFETs with strained well regions

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9922975B2Mar 20, 2018

Integrated circuit having field-effect trasistors with dielectric fin sidewall structures and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9748143B2Aug 29, 2017

FinFETs with strained well regions

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9748142B2Aug 29, 2017

FinFETs with strained well regions

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9559099B2Jan 31, 2017

Apparatus and method for FinFETs

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9553012B2Jan 24, 2017

Semiconductor structure and the manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11862683B2Jan 2, 2024

Ultra-thin fin structure and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US11189697B2Nov 30, 2021

Ultra-thin fin structure and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US11521969B2Dec 6, 2022

Isolation structures for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70
US11158719B2Oct 26, 2021

Method of manufacturing semiconductor devices and semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations68
US12426358B2Sep 23, 2025

Semiconductor device having epitaxy source/drain regions

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12369342B2Jul 22, 2025

Increasing source/drain dopant concentration to reduced resistance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12075607B2Aug 27, 2024

Semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12062710B2Aug 13, 2024

Increasing source/drain dopant concentration to reduced resistance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11830934B2Nov 28, 2023

Increasing source/drain dopant concentration to reduced resistance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11695063B2Jul 4, 2023

Method of forming shaped source/drain epitaxial layers of a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11574916B2Feb 7, 2023

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11355500B2Jun 7, 2022

Static random access memory cell and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

TAIWAN SEMICONDUCTOR MFG

6 patents

LEE YI-JING

2 patents

WAN CHENG-TIEN

1 patent

IND TECH RES INST

1 patent

Showing the top 50 of 87 patents by PatentIndex Score.