Inventor

XU WENYU

US181 patents

⚠️ This page may combine multiple inventors who share the name “XU WENYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

XU WENYU

IBM

Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain

Vertical field effect transistor having U-shaped top spacer

Nanosheet transistor with high-mobility channel

Integration of thick and thin nanosheet transistors on a single chip

Vertical FETs with different gate lengths and spacer thicknesses

Hybrid-channel nano-sheet FETs

Single-electron transistor with wrap-around gate

Vertical FET with reduced parasitic capacitance

Flipped vertical field-effect-transistor

Self-aligned source/drain junction for vertical field-effect transistor (FET) and method of forming the same

FinFETs with controllable and adjustable channel doping

Vertical field effect transistors with bottom contact metal directly beneath fins

Integration of vertical transistors with 3D long channel transistors

Fabrication of a vertical transistor with self-aligned bottom source/drain

Top contact resistance measurement in vertical FETs

Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates

Nanosheet transistor gate structure having reduced parasitic capacitance

Nanosheet semiconductor structure with inner spacer formed by oxidation

Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain

Self-aligned source/drain contact for vertical field effect transistor

Hybrid-channel nano-sheet FETs

Vertical field effect transistors with self aligned source/drain junctions

Nanosheet devices with different types of work function metals

Vertical fin field effect transistor with integral U-shaped electrical gate connection

H-shaped VFET with increased current drivability

Nanosheet with changing SiGe percentage for SiGe lateral recess

Direct gate patterning for vertical transport field effect transistor

Flipped vertical field-effect-transistor

Vertical field effect transistors with bottom source/drain epitaxy

Fabrication of a vertical fin field effect transistor (vertical finFET) with a self-aligned gate and fin edges

Vertical field effect transistor having U-shaped top spacer

Flipped vertical field-effect-transistor

Flipped vertical field-effect-transistor

Vertical field effect transistors with bottom source/drain epitaxy

Radiation sensor, method of forming the sensor and device including the sensor

Integrated device with P-I-N diodes and vertical field effect transistors

Tensile and compressive fins for vertical field effect transistors

Vertical single electron transistor formed by condensation

Vertical transistor devices with composite high-K and low-K spacers with a controlled top junction

Vertical fin field effect transistor with a reduced gate-to-bottom source/drain parasitic capacitance

VFET device with controllable top spacer

Vertical field effect transistors with self aligned source/drain junctions

Inner spacer and junction formation for integrating extended-gate and standard-gate nanosheet transistors

Single diffusion break isolation for gate-all-around field-effect transistor devices

Vertical field effect transistor replacement metal gate fabrication

Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between adjacent gates

Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain

Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain

NEUBORON MEDTECH LTD

Beam shaping assembly for neutron capture therapy

TESSERA LLC

Hybrid-channel nano-sheet FETs