Inventor

RATHI SOMILKUMAR J

US52 patents

⚠️ This page may combine multiple inventors who share the name “RATHI SOMILKUMAR J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RATHI SOMILKUMAR J

KEPLER COMPUTING INC

Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures and methods of fabrication

Method of fabricating transistors and stacked planar capacitors for memory and logic applications

Memory device fabrication through wafer bonding

Multi-level hydrogen barrier layers for memory applications

Integrated via and bridge electrodes for memory array applications and methods of fabrication

Iterative monetization of process development of non-linear polar material and devices

Method of fabricating transistors and stacked non-planar capacitors for memory and logic applications

Gate coupled non-linear polar material based capacitors for memory and logic

Methods of fabricating planar capacitors on a shared plate electrode

Capacitor devices with shared electrode and methods of fabrication

Drain coupled non-linear polar material based capacitors for memory and logic

Methods of fabricating trench capacitors on a shared plate electrode

Integration of 2T-NC for memory and logic applications

Planar capacitors with shared electrode and methods of fabrication

Stacked capacitors with shared electrodes and methods of fabrication

Trench capacitors with shared electrode

Multi-level hydrogen barrier layers for memory applications and methods of fabrication

Integrated trench and via electrode for memory device applications and methods of fabrication

Dual hydrogen barrier layer for memory devices

Integrated trench and via electrode for memory device applications

Conductive and insulative hydrogen barrier layer for memory devices

Dual hydrogen barrier layer for memory devices integrated with low density film for logic structures and methods of fabrication

High density dual encapsulation materials for capacitors and methods of fabrication

Memory device fabrication through wafer bonding

Method of forming capacitors through wafer bonding

Method of integrating a capacitor including a non-linear polar material with a transistor through wafer bonding

Capacitor integrated with a transistor for logic and memory applications

Iterative monetization of precursor in process development of non-linear polar material and devices

Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based memory devices

Trench capacitors with continuous dielectric layer and methods of fabrication

Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications and methods of fabrication

Planar and trench capacitors for logic and memory applications and methods of fabrication

Planar and trench capacitors for logic and memory applications

Pocket flow for trench capacitors integrated with planar capacitors on a same substrate and method of fabrication

Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications

Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures

Method of fabricating a perovskite-material based planar capacitor using rapid thermal annealing (RTA) methodologies

Method of fabricating a perovskite-material based trench capacitor using rapid thermal annealing (RTA) methodologies

Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitors

Iterative method of multilayer stack development for device applications

EUGENUS INC

Titanium silicon nitride barrier layer

Smooth titanium nitride layers and methods of forming the same

Conformal and smooth titanium nitride layers and methods of forming the same

Conformal titanium nitride-based thin films and methods of forming same

Conformal titanium nitride-based thin films and methods of forming same

Multi-region diffusion barrier containing titanium, silicon and nitrogen

Conformal and smooth titanium nitride layers and methods of forming the same

Smooth titanium nitride layers and methods of forming the same

Titanium silicon nitride barrier layer

Systems and methods of placing substrates in semiconductor manufacturing equipment